Components for single crystal growth and CVD that can handle SiC processes above 2000℃. Electrostatic chucks compatible with sputtering and ion implantation at high temperatures.
Momentive's "Tantalum Carbide Coating" has a proven track record as a component in SiC single crystal growth furnaces and epitaxial equipment, while the "Electrostatic Chuck" is used in high-temperature ion implantation and sputtering processes for Si and SiC semiconductor processes. 【Features】 ■ Tantalum Carbide - Usable at ultra-high temperatures (over 2000°C) - Excellent coating capability that accommodates complex shapes ■ Electrostatic Chuck - Compatible with processes up to 1000°C - High design flexibility according to specifications *For more details, please refer to the catalog. Feel free to contact us with any inquiries.
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■ Tantalum Carbide Coating Proven track record as components for SiC single crystal growth furnaces and epitaxial (CVD) equipment. ■ Electrostatic Chuck Proven track record in high-temperature ion implantation and sputtering processes for Si and SiC semiconductor processes.
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Momentive Technologies Japan Co., Ltd. develops, manufactures, and sells high thermal conductivity heat sinks, heaters/electrostatic chucks, ceramic products, and corrosion/heat-resistant coatings. We also handle a wide range of quartz and silicone products. Please feel free to contact us when you need assistance.