It is possible to measure simply using XPS! Please inquire about semiconductors other than oxide-based ones.
At AITES, we conduct "simple measurement of band gaps using XPS." It is possible to simply measure the band gaps of materials or thin films with relatively wide band gaps among semiconductors and insulators using XPS. When measuring the band gap of β-Ga2O3 using the O1s peak, the band gap of this β-Ga2O3 was measured to be approximately 4.9 eV, based on the difference between the peak position of O1s and the energy loss edge due to the band gap. 【Features】 ■ Can be easily measured using XPS ■ Simple measurement of thin films with wide band gaps, such as SiON, is also possible ■ Supports semiconductors other than oxide-based materials *For more details, please refer to the PDF document or feel free to contact us.
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【Measurement Examples】 ■Band gap of Ga2O3: Measurement of O1s ■Band gap of SiC: Measurement of Si2p *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
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Aites was established in 1993, originating from the quality assurance department of the IBM Japan Yasu office. Based on the technical expertise cultivated through cutting-edge defect analysis and reliability assurance of electronic components at the IBM Japan Yasu office, we have provided various products and services that support the development and manufacturing of semiconductors, displays, organic EL, solar cells, and electronic components to customers both domestically and internationally.
