Y5O4 F7 film for the protective film of etching/ashing device components.

The Y5O4 F7 film has a small change in surface fluorine content, allowing for a significant reduction in the aging time of the etching equipment. Its transmittance characteristics are also excellent.

In the dry etching process, which is one of the semiconductor manufacturing processes, when wafer processing is performed, phenomena occur where products from the process gas itself and by-products during etching adhere to the chamber inner walls and the surfaces of parts inside the chamber. The adhesion of these deposits changes the surface state of the chamber before and after processing, leading to fluctuations in the process conditions. To mitigate such fluctuations in process conditions, conventional techniques have applied a method (aging) to stabilize the chamber inner surface state by processing similar wafers before product processing to coat the deposits. The Y5O4 F7 film has a smaller change in surface fluorine content before and after plasma treatment compared to the Y2O3 film, which significantly shortens the aging time of the etching equipment and contributes to increased equipment operating time.

Etching EquipmentProcessing ContractSurface treatment contract service