Surface analysis device using atoms in the probe (an advanced version of CAICISS)

Crystal orientation and pole production are evident in 15 minutes! Stable surface analysis is possible without the influence of charging! Time-of-flight atomic scattering surface analysis device [We accept analysis requests!]

The "TOFLAS-3000" is an atomic scattering surface analysis device that can simultaneously perform crystal structure and elemental analysis of solid surfaces such as metals, semiconductors, and insulators. This device has developed the coaxial direct collision ion scattering spectroscopy (CAICISS) method, using an atomic beam of electrically neutral He (Ne, Ar) as a probing tool, allowing for stable surface analysis without the influence of charging, even on insulators. In crystal surface structure analysis, a unique pattern specific to the crystal surface can be obtained through an omnidirectional scan of the incident angle, making it visually easy to determine the surface structure. 【Features】 - Visualization of crystal orientation, symmetry, and the front and back of polar crystals * Easy distinction of the front and back of crystals with wurtzite structures (such as GaN and AlN) - Simple elemental analysis and crystal structure analysis for each layer near the surface * Analysis of ultra-thin films is also possible - When synchronized with pole figure simulation, it can be operated as if "seen in person" - No issues with orientation determination of insulating samples or organic molecular films - High-sensitivity evaluation of impurities through simultaneous measurement with SIMS (complementary to TOF spectra) * For more details, please refer to the PDF document or feel free to contact us. * We also accept analysis requests.

Semiconductor inspection/test equipmentAnalytical Equipment and Devices