[Analysis Case] Evaluation of Depth Profile Concentration Distribution of Alkali Metals in SiO2 by GCIB
Evaluation of impurities in SiO2 films
Alkali metals such as Li, Na, and K are key elements that cause various failures in semiconductors. These are referred to as mobile ions that can move within the film during measurement, making it difficult to obtain an accurate distribution. In this study, by conducting depth-direction analysis using a GCIB (Ar cluster) with a sputter ion source in TOF-SIMS, it was found that the movement of alkali metals can be suppressed even at room temperature compared to oxygen sputter guns. This measurement allows for qualitative and quantitative analysis of impurities within SiO2 films. Measurement method: TOF-SIMS Product fields: LSI, memory, electronic components Analysis purpose: Trace concentration evaluation For more details, please download the materials or contact us.
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Analysis of LSI, memory, and electronic components.
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!
