Coordinating with the RTC signals output from the module itself, achieving short-circuit protection functionality!
The "VLB512-01R/VLB519-01R" is a gate drive unit for SiCMOSFET modules with an RTC circuit built by Mitsubishi Electric Corporation. 【Features】 ■ Simple and easy-to-handle dual-circuit gate drive system ■ Built-in short-circuit detection circuit compatible with the RTC circuit in the module ■ Built-in short-circuit protection circuit ■ Connected to the MOSFET module via harness ■ Built-in isolated DC-DC converter for gate power supply ■ Output gate peak current: +/-30A (max) ■ Isolation withstand voltage: 4000Vrms (1 minute) 【Specifications】 <VLB512-01R> ■ Gate output power: up to 10W ■ Board size: 90×145mm <VLB519-01R> ■ Gate output power: up to 3.75W ■ Board size: 80×130mm *For more details, please refer to the PDF document or feel free to contact us.
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basic information
【Target SiCMOSFET Module】 FMF600DXZ-24B/FMF800DXZ-24B FMF1200DXZ-24B/FMF300DXZ-34B FMF300BXZ-24B/FMF400BXZ-24B FMF400DY-24B, etc. *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
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Isahaya Electronics began production of small signal transistors in 1973 and has evolved its semiconductor technology into design technologies for gate drivers and DC/DC converters. In recent years, the company has also focused on developing high-efficiency, high-power-factor power supply technologies to contribute to carbon neutrality. (Three-phase PFC, 1500V input compatible DC/DC converters, bidirectional converters, etc.) Meanwhile, to meet diverse needs, small signal transistors have also evolved with enhanced functionality and integration, expanding the lineup of high-voltage, high-current transistors, MOSFETs, and analog ICs.
