InGaAs photodiode ceramic assembly

basic information

OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide products with excellent reliability and cost performance, utilizing efficient manufacturing know-how to meet the requirements of mass production.

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Applications/Examples of results

■Wavelength Lock / Wavelength Monitor ■Laser Back Facet Monitoring ■DWDM and Various Instrumentation

Detailed information

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  Broadband AR Coated InGaAs Photodiode The FCI-InGaAs-XXX-WCER with active area sizes of 70μm, 120μm, 300μm, 400μm, and 500μm is a monitor photodiode mounted on a metallized ceramic substrate. ● Specifications [Model Name: Active Area, Responsivity at 1310nm, Responsivity at 1550nm, Capacitance, Dark Current, Maximum Reverse Voltage, Maximum Reverse Current, Maximum Forward Current] FCI-InGaAs-WCER-LR: —, 0.85 A/W, 0.90 A/W, 15 pF Vr=5.0V, 1 nA Vr=5.0V, 20 V, 2 mA, 5 mA

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  【High-Speed InGaAs Photodiode on Ceramic Submount】 FCI-InGaAs-XXX-WCER is a monitor photodiode mounted on a metallized ceramic substrate with active sizes of 70μm, 120μm, 300μm, 400μm, and 500μm. ● Specifications [Model Name: Active Area, Responsivity at 1310nm, Responsivity at 1550nm, Dark Current, Capacitance, Rise Time, Reverse Voltage, Package] FCI-InGaAS-75WCER: 75μm, 0.9 A/W, 0.95 A/W, 0.03 nA Vr=5.0V, 0.65 pF Vr=5.0V, 0.2 ns Vr=5.0V, 20 V max, FCI-InGaAS-XXX-WCER FCI-InGaAS-120WCER: 120μm, 0.9 A/W, 0.95 A/W, 0.05 nA Vr=5.0V, 1 pF Vr=5.0V, 0.3 ns Vr=5.0V, 20 V max, FCI-InGaAS-XXX-WCER

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  High-speed InGaAs photodiode mounted on an angled ceramic submount. The FCI-InGaAs-XXX-LCER is a high-speed IR-sensitive photodiode mounted on a gull-wing ceramic substrate with active sizes of 70μm, 120μm, 300μm, 400μm, and 500μm. ● Specifications [Model Name: Active Area, Responsivity at 1310nm, Responsivity at 1550nm, Dark Current, Capacitance, Rise Time, Reverse Voltage, Package] FCI-InGaAS-75ACER: 75μm, 0.9 A/W, 0.95 A/W, 0.03 nA Vr=5.0V, 0.65 pF Vr=5.0V, 0.2 ns Vr=5.0V, 20 V max, FCI-InGaAS-XXX-ACER FCI-InGaAS-120ACER: 120μm, 0.9 A/W, 0.95 A/W, 0.05 nA Vr=5.0V, 1 pF Vr=5.0V, 0.3 ns Vr=5.0V, 20 V max, FCI-InGaAS-XXX-ACER

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  High-speed InGaAs photodiode in lead ceramic package The FCI-InGaAs-XXX-LCER is a high-speed IR-sensitive photodiode mounted on a glass window gullwing ceramic substrate with active sizes of 70μm, 120μm, 300μm, 400μm, and 500μm. ● Specifications [Model Name: Active Area, Responsivity at 1310nm, Responsivity at 1550nm, Dark Current, Capacitance, Rise Time, Reverse Voltage, Package] FCI-InGaAS-75LCER: 75μm: 0.9 A/W, 0.95 A/W, 0.03 nA, Vr=5.0V, 0.65 pF, Vr=5.0V, -20 V max, FCI-InGaAS-XXX-LCER FCI-InGaAS-120LCER: 120μm, 0.9 A/W, 0.95 A/W, 0.05 nA, Vr=5.0V, 1 pF, Vr=5.0V, 0.3 ns, Vr=5.0V, 20 V max, FCI-InGaAS-XXX-LCER

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  High-Speed InGaAs Photodiode on Cavity Ceramic Package ● Specifications [Model Name: Active Area, Responsivity 1310nm, Responsivity 1550nm, Dark Current, Capacitance, Rise Time, Reverse Voltage, Package] FCI-InGaAS-75CCER: 75μm, 0.9 A/W, 0.95 A/W, 0.03 nA Vr=5.0V, 0.65 pF Vr=5.0V, 0.2 ns Vr=5.0V, 20 V max, FCI-InGaAS-XXX-CCER FCI-InGaAS-120CCER: 120μm, 0.9 A/W, 0.95 A/W, 0.05 nA Vr=5.0V, 1 pF Vr=5.0V, 0.3 ns Vr=5.0V, 20 V max, FCI-InGaAS-XXX-CCER FCI-InGaAS-300CCER: 300μm, 0.9 A/W, 0.95 A/W, 0.3 nA Vr=5.0V, 10 pF Vr=5.0V, 1.5 ns Vr=5.0V, 15 V max, FCI-InGaAS-XXX-CCER