Temperature Dependence of Discoloration in Wafer-Type Ceramic (Sapphire Substrate)

In Ar plasma, the color difference is small, while in O2 plasma, there is a tendency for the color difference to become larger.

We would like to introduce the temperature dependence of discoloration in wafer-type ceramic (sapphire substrate) technical data. When the wafer-type ceramic was heated to 400°C and subjected to plasma treatment, a tendency for the color difference to decrease was observed with Ar plasma, while an increase in color difference was observed with O2 plasma. Although there is a temperature dependence on discoloration, it was confirmed that it can still be used as an indicator even at 400°C. 【Overview of Ar/O2 Plasma Treatment】 ■ Method: CCP (RF) ■ Initial Vacuum Level: 5.0×10^-4 Pa ■ RF Power: 50 W ■ Gas Flow Rate: 40 sccm ■ Treatment Gas Pressure: 10 Pa ■ Treatment Time: 10 minutes *For more details, please refer to the related links or feel free to contact us. *The first image shows Ar plasma treatment, and the second image shows O2 plasma treatment.

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