Si anisotropic etching
Anisotropic etching of Si is a technique that utilizes the crystal axis orientation of Si to create half-holes and through-holes. For example, when a Si wafer (type #100) is anisotropically etched, sharp and high-precision patterning is possible at an angle of 54.7 degrees to the crystal axis direction. For more details, please feel free to "Contact Us."
Inquire About This Product
basic information
Anisotropic etching of Si is a technique that utilizes the crystal axis orientation of Si to create half-holes and through-holes. For example, when anisotropically etched using a Si wafer (type #100), sharp and high-precision patterning can be achieved at an angle of 54.7 degrees to the crystal axis direction. For more details, please feel free to "Contact Us."
Price information
-
Delivery Time
Applications/Examples of results
For more details, please contact us.
Company information
In the future, as represented by MEMS, the research and development department will become indispensable in this industry, where higher precision and greater refinement are increasingly required. Our company will assist with prototyping and development using the know-how we have cultivated over many years. We look forward to inquiries from all industries, not just in the fields of electronics and optics.
![[Must-See for Engineers!!] MEMS-related Photo Etching Technical Documentation Collection](https://image.mono.ipros.com/public/product/image/1fe/2000151167/IPROS4342770482048066255.JPG?w=280&h=280)
![[Leveling Correction] Leveling correction of concrete floors "Teratec Method"](https://image.mono.ipros.com/public/product/image/d08/1267539002/IPROS70063422645318547243.jpeg?w=280&h=280)
