Mercury Prober CV/IV Measurement System

basic information

This is a CV/IV measurement system using a mercury probe method developed by Four Dimensions, Inc. in the United States, which excels in reproducibility and safety. It can measure the characteristics of various wafers such as Si, compounds, SOI, and bulk. 【Features】 ◆ No need for electrode fabrication. Since the mercury itself acts as the electrode, there is no need for the time-consuming and costly patterning process. Measurements can be taken in a bulk state or with an insulating film formed. ◆ Automatic system. It allows for the specification of up to 49 measurement sites for automatic mapping measurements of C-V, I-V characteristics, TDDB, Vdb, Qbd oxide breakdown evaluation, Dit, doping concentration, oxide film thickness, Low-k, High-k, etc. ◆ High measurement reproducibility. Excellent measurement reproducibility is achieved through a uniquely designed mercury probe area and the use of fresh mercury for each measurement. ◆ Compact structure. Integrates CV, IV meter, transport platform, and probe section. ◆ Compatible with various wafers and chips. Capable of measuring 1 to 12-inch wafers and chip-sized samples.

Price information

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Applications/Examples of results

◆ Evaluation of epitaxial/ion implantation layers. Ion implantation dose, carrier concentration, Vfb, etc. of silicon wafers or compound wafers. ◆ Evaluation of insulating films. Relative permittivity (Low-K, High-K), Dit, Vbd, Qbd, TDDB, oxide film capacitance/thickness, carrier generation lifetime, I-V measurements, pinhole density, resistivity, etc. of gate or field insulating films. ◆ Evaluation of ferroelectric films. Hysteresis, response time, K-E, P-E, K-f, etc. *For details, please refer to "Request for Materials."