List of CVD Equipment products
- classification：CVD Equipment
31～45 item / All 280 items
Reduce the workload from handling heavy objects! Here are five case studies that solved customer challenges! We are also accepting free consultations and tests tailored to your work!
- Other conveying machines
Presentation of explanatory materials on JIS and ISO standards. We propose suitable safety barriers from a rich product series! Free rental of demo kits.
- Other safety and hygiene products
The compatible film types are DLC, amorphous SiC, etc.! Equipped with a substrate heating mechanism (maximum set temperature: 500°C).
- Plasma Generator
- CVD Equipment
4.5 generation glass substrate deposition system for rigid/flexible devices such as FPD.
- CVD Equipment
Mass production / NSG(SiO2)/PSG/BPSG deposition High-productivity / Continuous atmospheric pressure CVD (APCVD) system (for 12-inch wafers)
- CVD Equipment
Mass Production / NSG(SiO2)/PSG/BPSG deposition High-productivity/Continuous atmospheric pressure CVD (APCVD) system (for up to 8-inch wafers)
- CVD Equipment
It is an engineering plastic that boasts excellent heat resistance, low water absorption rate, and outstanding sliding properties.
- CVD Equipment
- valve
- plastic
There is a track record of growing nitride semiconductor crystals on various semiconductor substrates. Customization is also possible according to your requests.
- CVD Equipment
- LED Module
- Wafer
Explaining the benefits of aerogel products that can be used in high-temperature environments!
- CVD Equipment
◉ Short time: Easily conduct graphene synthesis experiments in just 30 minutes per batch. ◉ High-precision temperature and pressure control. ◉ Sophisticated software.
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
CVD, PVD (evaporation, sputtering, etc.) high vacuum, ultra-high temperature plate heater for wafer and small chip heating with excellent uniformity and reproducibility.
- Other semiconductor manufacturing equipment
- Annealing furnace
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Plasma CVD equipment compatible with wafer sizes of Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities.
- CVD Equipment
★☆★☆【MiniLab-026】Small Thin Film Experimental Device for R&D Development★☆★☆
This is a flexible thin film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug & Play feel, achieving compact size, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many more options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.
![[Nanofurnace] BWS-NANO Thermal CVD ...](https://image.mono.ipros.com/public/product/image/0d0/2000191194/IPROS99314670218218380543.jpeg?w=280&h=280){kind=small}
Hot Wall Type Thermal CVD Equipment: A compact, high-performance CVD device ideal for fundamental research.
- CVD Equipment
- Annealing furnace
- Heating device
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
TiC treatment and TiCN treatment are possible! It can be used under harsher conditions than PVD treatment.
- CVD Equipment