List of CVD Equipment products
- classification：CVD Equipment
31～45 item / All 278 items
Achieves high collection efficiency through electrostatic methods. Offers a wide range of products from large to small sizes. Also compatible with water-soluble oil mist.
- air conditioning
We have a track record of equipment such as 'plasma CVD systems for metal containers' and 'ICP-type MOCVD systems'!
- CVD Equipment
Coating is possible up to a 3L container! It contributes to reducing logistics costs through lightweight containers.
- CVD Equipment
A simple structure with high versatility! It adopts a unique plasma control method.
- CVD Equipment
The compatible film types are DLC, amorphous SiC, etc.! Equipped with a substrate heating mechanism (maximum set temperature: 500°C).
- Plasma Generator
- CVD Equipment
4.5 generation glass substrate deposition system for rigid/flexible devices such as FPD.
- CVD Equipment
Mass production / NSG(SiO2)/PSG/BPSG deposition High-productivity / Continuous atmospheric pressure CVD (APCVD) system (for 12-inch wafers)
- CVD Equipment
Mass Production / NSG(SiO2)/PSG/BPSG deposition High-productivity/Continuous atmospheric pressure CVD (APCVD) system (for up to 8-inch wafers)
- CVD Equipment
It is an engineering plastic that boasts excellent heat resistance, low water absorption rate, and outstanding sliding properties.
- CVD Equipment
- valve
- plastic
There is a track record of growing nitride semiconductor crystals on various semiconductor substrates. Customization is also possible according to your requests.
- CVD Equipment
- LED Module
- Wafer
Explaining the benefits of aerogel products that can be used in high-temperature environments!
- CVD Equipment
◉ Short time: Easily conduct graphene synthesis experiments in just 30 minutes per batch. ◉ High-precision temperature and pressure control. ◉ Sophisticated software.
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
CVD, PVD (evaporation, sputtering, etc.) high vacuum, ultra-high temperature plate heater for wafer and small chip heating with excellent uniformity and reproducibility.
- Other semiconductor manufacturing equipment
- Annealing furnace
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.