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Analysis of the etch pit shape on SiC wafers

Analysis of the etch pit shape on SiC wafers

Introducing a case where etch pits formed on SiC wafers were observed using a 3D X-ray microscope (X-ray CT)!

In order to promote the spread of power semiconductors, the development of low-defect SiC wafers is underway. X-ray CT is a method that visualizes the shape of materials in three dimensions non-destructively and allows for quantitative evaluation. In the PDF document, you can see the CT images obtained when observing the etched pits formed on SiC wafers using a 3D X-ray microscope (X-ray CT). [Overview] ■ Shape analysis of etched pits using X-ray CT *For more details, please refer to the PDF document or feel free to contact us.

  • Structural Analysis

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Strain analysis of Si wafers

Strain analysis of Si wafers

The X-ray rocking curve method makes it possible to detect the strain of crystals without shape changes such as warping!

We would like to introduce our "Strain Analysis of Si Wafers." In the manufacturing process of semiconductor devices, residual stress generated during the thin grinding of wafers can lead to product failures, defects, and degradation. In this instance, we will perform mechanical polishing on Si wafers to reduce the surface crystallinity and evaluate the changes in crystallinity before and after polishing using X-ray rocking curve measurements. The X-ray rocking curve method can detect the strain of crystals without shape changes such as warping. 【Technical Overview】 ■ Rocking Curve Measurement - By fixing the detector at the angle position where diffraction occurs and rotating only the sample, the angular distribution of rotation that satisfies the diffraction condition can be measured. - The peak width and intensity of the angular distribution (rocking curve) reflect the variation in the tilt of the crystal planes, serving as an evaluation index for crystallinity. - For single crystals, small strains can be evaluated through high angular resolution measurements. *For more details, please download the PDF or feel free to contact us.

  • Contract Analysis

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Surface and thin film analysis of semiconductors

Surface and thin film analysis of semiconductors

Detailed investigation of surface chemical composition, bonding states, and impurity distribution!

We would like to introduce our "Surface and Thin Film Analysis of Semiconductors." We propose effective analyses for material evaluation and failure mode identification in the process development, process management, and failure analysis of semiconductor devices. We provide detailed information that is useful for research and development, manufacturing processes, and failure analysis by examining the chemical composition, bonding states, and impurity distribution of surfaces. Please feel free to contact us when you need our services. 【Top Surface】 ■Composition: XPS ■Bonding State: XPS ■Contamination: TOF-SIMS, ICP-MS ■Roughness: AFM, SEM *For more details, please download the PDF or feel free to contact us.

  • Contract Analysis

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