Last Updated： Aggregation Period:Aug 20, 2025～Sep 16, 2025
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1200V rated SiC MOSFET discrete products that achieve high reliability and low loss.
- Insulation-type package with heat dissipation capability (Rth(j-c)=0.22℃・w Typ) - Adopts a 4-pin structure to reduce the influence of source terminal inductance, achieving faster switching and lower loss - Industry-leading low on-resistance (15mΩ Typ Tj=150℃)
![[Data] Shirutoku Report No. 53 #Avalanche Test (2)](https://image.mono.ipros.com/public/product/image/ba8/2000697228/IPROS80433368801891038307.jpeg?w=280&h=280)
Explaining the transient thermal resistance of devices using diagrams! Calculations will be performed using a MOSFET with appropriate parameters as an example.
★★Shirutoku Report: Useful Information You Should Know★★ This report is a continuation of the avalanche rating test of MOSFETs discussed in Shirutoku Report No. 52. We will explain the relationship between the device's transient thermal resistance and the losses and time during avalanche operation using diagrams and graphs. When selecting a device, comparing devices measured under different conditions is not very meaningful. It is recommended to measure in an environment as close to actual operation as possible, rather than relying solely on data sheet values. 【Contents】 ■ Transient thermal resistance of the device ■ Relationship between losses and time during avalanche operation ■ Graph of Tj and time *For more details, please refer to the PDF document or feel free to contact us.
Ideal for industrial equipment at 1200V! Achieves high-speed switching and low on-resistance, significantly reducing power loss and contributing to equipment miniaturization!
Introducing Toshiba Device & Storage's 1200V SiC MOSFET for industrial equipment and high-capacity power applications. This product adopts Toshiba's second-generation chip design, which enhances the reliability of SiC MOSFETs. The gate threshold voltage is set high at 4.2V to 5.8V, reducing the risk of malfunction (false arcing). Additionally, it incorporates a low forward voltage SiC Schottky Barrier Diode (SBD), which also reduces power loss. 【Application Devices】 ■ High-output, high-efficiency large-capacity AC-DC converters for industrial equipment ■ Solar inverters ■ Large-capacity bidirectional DC-DC converters such as UPS *For more details, please download the PDF or contact us.
Heat design is simplified, allowing for higher efficiency.
The "200V Ultra Junction X4 Class MOSFET" is a low RDS(on) MOSFET suitable for high-efficiency applications. This product is available in TO-220, TO-247-3L, TO-263, and TO-268HV packages, with a nominal rated current of 60 to 220A. Please feel free to contact us if you have any requests. 【Benefits】 ■ Reduced conduction loss due to low on-resistance RDS(on) ■ Simplified thermal design due to low thermal resistance RthJC ■ High surge tolerance provided by high avalanche energy capacity EAS ■ Reduced gate driver requirements due to decreased gate charge Qg *For more details, please download the PDF or feel free to contact us.
