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MOSFET(駆動) - メーカー・企業と製品の一覧

更新日： 集計期間:Oct 08, 2025～Nov 04, 2025
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MOSFETの製品一覧

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Low voltage driven MOSFET

Low voltage driven MOSFET

Expanding the lineup of low-voltage drive MOSFETs!

In mobile devices such as mobile phones, it is necessary to reduce circuit losses in order to decrease power consumption and extend operating time, which has led to a demand for low-voltage driven MOSFETs. As our first initiative, we are expanding our offerings for 1.8V and 1.5V driven products through optimization of the wafer process, and we plan to develop 1.2V in the second phase and 0.9V in the third phase.

  • Transistor

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High current, high voltage MOSFET

High current, high voltage MOSFET

High-speed switching is possible! Introducing our lineup of high current, high voltage MOSFETs!

We would like to introduce our "high current, high voltage MOSFETs." These devices enable high-speed switching and are suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches. They are appropriate for applications including LED driving, small capacity motor driving, DC-DC converters, load switches, high-speed switching, and analog switches. 【Features】 ■ Capable of high-speed switching ■ Suitable for applications such as driving LEDs and motors, Li-Ion charging control, DC-DC converters, and load switches *For more details, please refer to the PDF document or feel free to contact us.

  • DC Motor
  • LED Module
  • Transistor

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General-purpose MOSFET

General-purpose MOSFET

Introduction of general-purpose MOSFET lineup (VDSS = ~60V, ID = ~0.7A)!

Introducing our general-purpose MOSFET. This product can be used for various applications due to its general-purpose nature. Target applications include LED driving, motor driving, lithium-ion charging control, DC-DC converters, and load switches, among others. The product specifications include a maximum VDSS of 60V, a maximum ID of 0.7A, and a threshold voltage ranging from 0.5 to 2.0V, making it a versatile general-purpose MOSFET with various characteristics. Additionally, we offer ultra-compact packages such as SC-75A, SC-70, and SC-59, making it suitable for new adoptions as well as alternatives for EOL products from other companies. Some products are also compatible with automotive applications, so please refer to the brochure for details or contact our sales team for inquiries.

  • Transistor

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『CSD22206W』

『CSD22206W』

8V, 4.7mΩ, P-channel NexFET power MOSFET 'CSD22206W'

This -8V, 4.7mΩ, 1.5mm×1.5mm device is designed to achieve the lowest possible on-resistance and gate charge in the smallest possible footprint, while also providing excellent thermal characteristics in a very low profile. With its low on-resistance, small footprint, and low profile, this device is ideal for battery-powered applications with volume constraints. 【Features】 ■ Extremely low resistance ■ Small footprint of 1.5mm×1.5mm ■ Lead-free ■ Gate ESD protection ■ RoHS compliant *For more details, please contact us.

  • Other semiconductors
  • Other power sources
  • Transistor

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200V Ultra Junction X4 Class MOSFET

200V Ultra Junction X4 Class MOSFET

Heat design is simplified, allowing for higher efficiency.

The "200V Ultra Junction X4 Class MOSFET" is a low RDS(on) MOSFET suitable for high-efficiency applications. This product is available in TO-220, TO-247-3L, TO-263, and TO-268HV packages, with a nominal rated current of 60 to 220A. Please feel free to contact us if you have any requests. 【Benefits】 ■ Reduced conduction loss due to low on-resistance RDS(on) ■ Simplified thermal design due to low thermal resistance RthJC ■ High surge tolerance provided by high avalanche energy capacity EAS ■ Reduced gate driver requirements due to decreased gate charge Qg *For more details, please download the PDF or feel free to contact us.

  • Other electronic parts

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Power Semiconductor 2000V N-Channel Power MOSFET

Power Semiconductor 2000V N-Channel Power MOSFET

High voltage power conversion system! Suitable for various power exchange systems.

The 2000V N-channel power MOSFET is a high-voltage power MOSFET for high-voltage power conversion systems. It eliminates the need for series connections of low-voltage devices, allowing for parallel operation due to its positive temperature coefficient of on-resistance, enabling the construction of cost-effective power systems. Other advantages include a reduction in the number of components that make up the gate drive circuit due to fewer devices used, leading to cost reduction, improved reliability through simpler designs, and saving PCB space, contributing to miniaturization. 【Features】 ○ High blocking voltage ○ Unique high-voltage package ○ Increased creepage distance between terminals ○ Positive temperature coefficient of on-resistance ○ Space-saving (reducing multiple series connections of devices) For more details, please contact us or download the catalog.

  • Other semiconductors
  • Other electronic parts

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[Information] Shirutoku Report No. 99 #About SiC MOSFETs

[Information] Shirutoku Report No. 99 #About SiC MOSFETs

The performance of MOSFETs is compared using a performance index called FoM! Measurement conditions vary by manufacturer.

★★Shirutoku Report: Useful Information You Should Know★★ SiC MOSFETs have the characteristic of high voltage resistance compared to Si, while also having low resistance. Leveraging this feature, many products are seen replacing high-voltage IGBTs with SiC MOSFETs. This time, I would like to talk about MOSFETs. If you want to know about SiC diodes, please refer to Shirutoku Report No. 12. 【Contents】 ■Comparison examples of Si-MOSFET, IGBT, and SiC-MOSFET ■Do not compare only based on ON resistance ■When replacing with SiC, be careful to change the drive voltage as well *For more details, please refer to the PDF document or feel free to contact us.

  • diode

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