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Measuring Instrument Product List

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Non-contact CV measurement device Cn0CV

Non-contact heavy metal contamination, CV/IV, membrane evaluation device. The sensitivity of iron concentration measurement achieves E8 by adopting DSPV!

This is a non-contact heavy metal contamination, CV/IV, and film evaluation device with over 400 units in operation worldwide. The sensitivity for iron concentration measurement has achieved E8 by adopting DSPV, contributing to the improved yield of recent CMOS image sensors. It is capable of CV measurement of compound semiconductors and can measure the concentration distribution and profile in the plane non-contactly.

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Non-contact mobility measurement device "LEI-1610 Series"

Measurement of various semiconductor carrier transport characteristics is possible! Non-contact mobility measurement using microwave reflection!

For the manufacturing of semiconductor devices, carrier mobility is a very important parameter. The "LEI-1610 Series" is a non-contact mobility measurement device capable of measuring various semiconductor carrier transport characteristics such as mobility, carrier concentration, and sheet resistance. Carrier mobility, sheet resistance, and sheet charge density can be measured non-contact and destructively on Si wafers ranging from 2 inches to a maximum of 8 inches, as well as on compound semiconductor (GaAs, GaN, InP, etc.) epi wafers. 【Features】 ■ Non-contact mobility measurement using microwave reflection ■ Standard measurement device for high-frequency device characteristics ■ High correlation with measurement results from the Hall effect ■ Multi-carrier modeling option *For more details, please refer to the related link page or feel free to contact us.

  • Other measurement, recording and measuring instruments

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Expansion Resistance Measurement Device "SRP-170/2100"

Measure the depth of PN junction and carrier concentration distribution! Surface resistance measurement available as an option!

We would like to introduce our spread resistance measurement device, the 'SRP-170/2100'. By making contact with two probes in the depth direction on a diagonally polished Si wafer, we can measure the specific resistivity profile in the depth direction of Si, the thickness of the EPI layer, the depth of the PN junction, and the carrier concentration distribution from the spread resistance value between the probes. The "SRP2000" automates the conditioning of the probes, measurement of the bevel angle, and data input for standard samples, allowing for continuous automatic measurement of multiple samples, with a maximum of 6 samples able to be loaded simultaneously. 【Features】 ■ World-standard carrier concentration distribution and profile measurement device ■ Supports measurement automation (SRP-2100) ■ Surface resistance measurement available as an option (SRP-170) *For more details, please refer to the PDF document or feel free to contact us.

  • Other measurement, recording and measuring instruments
  • Semiconductor inspection/test equipment
  • Other inspection equipment and devices

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