Non-volatile memory "MB85R8M2TA"
Developed 8M-bit FeRAM that guarantees 100 trillion write cycles! Achieves high-speed operation and low power consumption.
The "MB85R8M2TA" is a parallel interface FeRAM that operates with a wide range power supply voltage of 1.8V to 3.6V. It achieves approximately 30% faster access speed compared to our conventional products while reducing operating current by 10%, balancing high-speed operation with low power consumption. It is well-suited for industrial machinery that requires high-speed operation, where SRAM has been used until now. 【Features】 ■ High rewrite endurance (high number of guaranteed rewrite cycles) ■ High-speed writing ■ Low power consumption ■ Over 20 years of mass production experience *For more details, please refer to the PDF document or feel free to contact us.
- Company：RAMXEED （旧：富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました）
- Price：Other
