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Memory Product List and Ranking from 53 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:Sep 30, 2026～Oct 27, 2026
This ranking is based on the number of page views on our site.

Memory Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Sep 30, 2026～Oct 27, 2026
This ranking is based on the number of page views on our site.

  1. オーエン Saitama//Electronic Components and Semiconductors
  2. RAMXEED （旧：富士通セミコンダクターメモリソリューション株式会社　2025/1/1に社名変更しました） Kanagawa//Electronic Components and Semiconductors
  3. null/null
  4. 4 セイワ 東京本社、関西支社、名古屋営業所、中国無錫　　グループ会社　エレクトロン（長野県松本市） Tokyo//Trading company/Wholesale
  5. 5 リョーサン ソリューション事業本部/システムソリューション部 Tokyo//Electronic Components and Semiconductors
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Memory Product ranking

Last Updated： Aggregation Period:Sep 30, 2026～Oct 27, 2026
This ranking is based on the number of page views on our site.

  1. Ultra-compact data input/output device IC memory KOALA60 マーブル　 エンベデッドプロダクト事業本部　プロダクト事業部
  2. Corporate-exclusive security USB memory 'Traventy(R)3' イーディーコントライブ イーディーコントライブ株式会社
  3. Ferroelectric non-volatile memory 'FeRAM' RAMXEED （旧：富士通セミコンダクターメモリソリューション株式会社　2025/1/1に社名変更しました）
  4. 4 Pseudo Static Random Access Memory 'HYPERRAM'
  5. 5 Low power consumption 13.3-inch wide electronic paper for smart bus stops Suntex Co., Ltd.

Memory Product List

91～120 item / All 628 items

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Non-volatile memory 'MB85RQ8MLX'

Non-volatile memory 'MB85RQ8MLX'

Data rewriting at 54MB per second is possible! We have developed an 8Mbit Quad SPI FeRAM.

The "MB85RQ8MLX" is a non-volatile memory that achieves a bandwidth of 54MB/s, equivalent to an SRAM with an access time of 45ns, by incorporating a high-speed serial interface known as Quad SPI. It can replace parallel interface SRAM without compromising memory performance. Additionally, it allows for a significant reduction in pin count compared to traditional parallel interfaces, simplifying the wiring layout on the circuit board and contributing to BOM cost reduction. We are also developing an 8M-bit Quad SPI FeRAM (MB85RQ8MX) that operates at 3.3V (2.7V to 3.6V). 【Features】 ■ Bit configuration: 1,048,576 words × 8 bits ■ Operating frequency: 108MHz (single read using FSTRD command) ■ Write/read endurance: 10^13 times/byte ■ Data retention characteristics: 10 years (+105℃) ■ Operating current: 18mA @ Quad I/O 108MHz *For more details, please refer to the PDF document or feel free to contact us.

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Case study of the adoption of non-volatile memory "FeRAM" in PLCs.

Case study of the adoption of non-volatile memory "FeRAM" in PLCs.

No need to fear unexpected power loss: Equipped with FeRAM to save data just before a power interruption and ensure reliable recovery!

A global company that broadly handles factory automation equipment such as PLCs, motion controllers, servo motors, and HMIs. Customers are adopting FeRAM in a wide range of products, starting with PLCs. It was clear that traditional non-volatile memories like EEPROM and FLASH memory had slow write speeds, making it difficult to meet the specifications required by end users. By narrowing down to high-speed non-volatile memory, FeRAM emerged as a candidate due to its strong track record in the market, and its adoption was decided. Customers have increased the number of end users with products that utilize FeRAM, solidifying their reputation and achievements in the market. [Case Overview] In PLCs, FeRAM enables high reliability, ease of maintenance, and a long system lifespan due to its fast write speeds, high rewrite endurance, and excellent data retention. *For more details, please download the PDF or feel free to contact us.*

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Adoption examples of non-volatile memory "FeRAM" in measuring instruments (temperature controllers)

Adoption examples of non-volatile memory "FeRAM" in measuring instruments (temperature controllers)

Enabling millisecond-level temperature control: Achieving high-speed data writing and longevity with FeRAM.

In cases where FeRAM is adopted, there have been instances where the consideration for incorporating FeRAM was initiated due to troubles caused by the insufficient performance of the originally used EEPROM. In terms of rewrite endurance, both FeRAM and SRAM met the requirements; however, FeRAM has the advantage of not requiring battery backup even when the system voltage is lost due to a failure, which led to the decision to adopt FeRAM. The adoption of FeRAM has improved the reliability of the product in terms of accuracy and lifespan, and it has also contributed to the reduction of peripheral circuits needed for using batteries and capacitors, thereby helping to lower development costs for customers with a simpler circuit configuration. [Case Overview] ■ Rapid recovery even in unexpected failures ■ High rewrite endurance capable of recording log data in milliseconds *For more details, please download the PDF or feel free to contact us.

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Reasons for choosing FeRAM for rotary encoders

Reasons for choosing FeRAM for rotary encoders

Perform counter calculations on data in memory even in a power-off state, and overwrite the data with the results after the calculations!

The FeRAM (MB85RDP16LX) for rotary encoders is equipped with an internal counter and FeRAM, allowing it to count the rotation speed of a motor. This means that even with the weak power generated by coil electromotive force, the calculations and writing of data stored in FeRAM can be completed, enabling continuous counting of the motor's rotation speed even in a power-off state. Unlike FLASH memory, FeRAM does not require a boost power supply and does not need a complex internal power sequence. Therefore, there is no waiting time until the power stabilizes, and memory can be accessed immediately after power-up. Additionally, unlike EEPROM, there is no waiting time for write operations, and it has a high rewrite endurance, allowing for data processing in memory (within FeRAM). **Five Reasons to Choose FeRAM for Rotary Encoders** - Fast startup - High-speed writing and high rewrite endurance - Low power consumption - Magnetic field resistance - No battery required *For more details, please download the PDF or feel free to contact us.*

  • ロータリーエンコーダ用FeRAMを選ぶ理由2.png
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High-speed, high-reliability non-volatile memory "MB85RQ8MX-DS1v1-J"

High-speed, high-reliability non-volatile memory "MB85RQ8MX-DS1v1-J"

New BGA 24-pin is here! Non-volatile memory that achieves high-speed writing and long-term retention! Numerous achievements in industrial equipment such as rotary encoders with non-volatile, low power consumption.

The "MB85RQ8MX-DS1v1-J," developed by RAMXEED Corporation (formerly Fujitsu Semiconductor Memory Solutions), is a non-volatile memory with an 8M-bit configuration that utilizes high-performance FeRAM (ferroelectric memory). It retains data without the need for a battery, achieving both high-speed access and long lifespan. Key features: - Supports Quad SPI (QSPI) with high-speed writing and reading up to 108MHz / 54MB/s - High rewrite endurance of 10¹⁴ cycles (+85°C) - Data retention period of 10 years at 105°C, 95 years at 55°C, and over 200 years at 35°C - Low power consumption design (30µA typ in standby) suitable for power-saving devices - Operating temperature range of -40°C to +105°C, stable operation in industrial and automotive environments - No write latency like flash memory, allowing for immediate writing - Newly added BGA 24-pin package compatible with high-density mounting Example applications: - Industrial equipment, network devices, RAID controllers - IoT devices, cameras, game consoles, automotive electronic control units *Samples are available. It is also suitable for introduction during prototype and evaluation stages.

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High-speed FeRAM (ferroelectric memory)

High-speed FeRAM (ferroelectric memory)

Achieved a high-speed cycle time and access time of 35ns! For replacing SRAM with battery backup.

At RAMXEED, we have started offering HS (Hot Samples) of our "High-Speed FeRAM (Ferroelectric Memory)." Typical FeRAM has a cycle time of 120ns and an access time of 65ns, but we have achieved significant speed improvements. It is well-suited for applications such as network-related devices, routers, industrial computers, storage, and RAID controllers. 【Features】 - Achieves high-speed cycle time and access time of 35ns - Can retain data without using batteries required for volatile memory, and since the package, pin configuration, and functionality are similar to asynchronous SRAM, it is suitable for replacing SRAM that requires battery backup - Reduces the labor involved in battery replacement and troubles related to battery disconnection - Well-suited for applications such as network-related devices, routers, industrial computers, storage, and RAID controllers *For more details, please download the PDF or feel free to contact us.

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A must-see for those struggling with GPU memory shortages! Efficient use of hardware using AI.

A must-see for those struggling with GPU memory shortages! Efficient use of hardware using AI.

Reduction in the number of GPUs! It will be possible to train large networks without increasing the required number of GPUs!

There is a problem of insufficient GPU memory for training large deep learning networks, while GPUs are expensive compared to HDDs and DRAM, making expansion difficult. By utilizing other hardware, it is possible to train large networks using only a single GPU! 【Technical Details】 ■ Data transfer to HDD using CUDA Unified Memory - Users can transfer data from GPU memory to Host memory without being aware of the transfer. - A technology has been implemented to transfer data to HDD when Host memory is insufficient by extending the Nvidia Driver. ■ Analysis of computation graphs - Development of a technology that keeps only the necessary data in the GPU, moving others to Host memory or storage, and transferring them back to the GPU when computation is likely needed. *For more details, please download the PDF or feel free to contact us.

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  • EAI/ETL/WEB application server
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Secure Flash Memory "W77Q Series"

Secure Flash Memory "W77Q Series"

Balancing cybersecurity and functional safety! The memory itself protects the data within it.

The "W77Q Series" is a secure flash memory that can add security features to existing models without security functions by replacing the standard flash memory currently in use. It enables application features such as secure boot, secure OTA, and secure storage. The tamper detection feature of SPI communication improves signal quality and contributes to functional safety. Additionally, since security features can be added without changing the PCB, it helps reduce development costs and makes use of existing assets. 【Features】 ■ 100% inherits the pin configuration and instruction set of conventional SPI flash memory ■ Operates like standard memory when security features are turned off ■ Detects and protects against unauthorized access through SPI command authentication ■ Hides addresses and data flowing on the SPI bus during read/write operations using stream encryption ■ Offers products ranging from 16Mb to 128Mb with a Vcc voltage of 1.8V *For more details, please download the PDF or feel free to contact us.

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Non-volatile memory "Toggle MRAM"

Non-volatile memory "Toggle MRAM"

Non-volatile memory that achieves high-speed access, high durability, and high reliability, enhancing system performance!

"Everspin Technologies Toggle MRAM" is a non-volatile memory with unlimited rewrite cycles. It features a DRAM/SRAM-like interface, achieving high-speed read/write performance. It can maintain data for decades without battery backup and is maintenance-free. In addition to reducing standby current consumption due to being battery-less, it enables system acceleration by leveraging its overwhelming speed. 【Features】 ■ High Durability: Enables the construction of systems that can maintain data without worrying about rewrite cycles. ■ High Performance: Achieves a DRAM/SRAM-like interface with high-speed read and write performance. ■ Persistence: Capable of maintaining data for decades without battery backup and is maintenance-free. *For more details, please download the PDF or feel free to contact us.

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ArmorFlash

ArmorFlash

This is an ideal solution for addressing information security issues in the era of IoT!

"ArmorFlash" is a security NOR Flash equipped with a unique, unreplicable PUF code technology. It provides user authentication, data encryption, and configurable security zones. It prevents malfunctions caused by unintended firmware writes, enabling the construction of robust and secure IoT products. 【Features】 ■ Ensures overall system security with the incorporation of unreplicable unique PUF code technology ■ Provides user authentication, data encryption, and configurable security zones ■ Simplifies designs using standard interfaces such as SPI, QSPI, and OctaBus *For more details, please download the PDF or feel free to contact us.

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Macronix SLC NAND Flash

Macronix SLC NAND Flash

Achieving high durability, high reliability, and high-speed reading and writing! High-quality memory suitable for sets requiring long-term data storage and fast, frequent rewriting.

"Macronix SLC NAND Flash" is a memory suitable for long-term data storage and frequent rewriting due to its high durability and low error rate. Its high-speed read and write performance is ideal for real-time processing and high-load applications. With fewer errors occurring, it reduces operational costs and effort related to error correction. Please feel free to contact us when you need assistance. 【Features】 ■ Durability: Over 100,000 rewrite cycles ■ Performance: High-speed read/write capabilities ■ Reliability: High data integrity due to 1-bit storage per cell / low occurrence of errors ■ Capacity range: Lineup from 1Gb to 8Gb *For more details, please download the PDF or feel free to contact us.

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SD Card/MicroSD Card - Specification List and Case Studies for Problem Solving

SD Card/MicroSD Card - Specification List and Case Studies for Problem Solving

We maintain high quality by utilizing our own firmware and advanced analytical capabilities. Our flash memory products are actively used in both consumer and industrial applications, suitable for our customers.

The "GT02/GT04 series" is a "SD card/MicroSD card" that maintains high analytical capabilities and quality. [GT02] This product has significantly improved speed compared to conventional products and has numerous adoption records in fields such as Raspberry Pi, automotive equipment, and industrial devices. → By achieving more than double the speed compared to previous models, it reduces the extent of speed degradation. Product lineup: 16GB to 256GB U1/U3 [GT04] Utilizing PCI Express technology, it enables speeds more than ten times greater compared to GT02. Product lineup: 256GB/512GB [Product Strengths] We manage the quality level of materials and maintain high quality through high analytical capabilities and root cause investigation. By developing our own analysis JIG, we have made it easier to identify issues and quickly release new products. ★ You can download the specifications list and case studies for problem-solving. ★ If you are interested, we can provide samples, so please contact us. *For more details, please refer to the PDF materials or feel free to contact us.

  • Company：GTS
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HBM3E chip market size 2026-2032

HBM3E chip market size 2026-2032

HBM3E chip market size 2026-2032: Significant expansion with a growth rate of 39.0%

What is HBM3E chip? The global market for HBM3E chips is expected to expand from 652 million USD in 2025 to 906 million USD in 2026, with a compound annual growth rate (CAGR) of 39.0% from 2026 to 2032, reaching 6.535 billion USD by 2032. The production volume in 2025 is estimated to be around 930,000 units, with a production capacity of approximately 1.16 million units, and the industry average gross profit margin is said to be between 50% and 70%. HBM3E (High Bandwidth Memory 3 Extended) is a high-performance memory that extends the fourth generation of high bandwidth memory, and its importance is increasing for applications that require high-speed processing of vast amounts of data, such as AI learning, large-scale inference, and scientific computing.

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Micross Corporation Defense-Grade High-Reliability Memory

Micross Corporation Defense-Grade High-Reliability Memory

High-reliability memory for space, defense, and industrial applications. Screening services also available.

Micross Components has acquired the defense memory businesses of Micron Semiconductor and Texas Instruments, and continues to supply them. We also support various ceramic and plastic packages and screening. For more details, please contact us or refer to our catalog.

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