We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for Memory.
ipros is IPROS GMS ・ IPROS One of the largest technical database sites in Japan that collects information on.

Memory Product List and Ranking from 42 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:Apr 01, 2026～Apr 28, 2026
This ranking is based on the number of page views on our site.

Memory Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Apr 01, 2026～Apr 28, 2026
This ranking is based on the number of page views on our site.

  1. エーアンドエフ・コーポレーション Tokyo//Other manufacturing
  2. オーエン Saitama//Electronic Components and Semiconductors
  3. RAMXEED （旧：富士通セミコンダクターメモリソリューション株式会社　2025/1/1に社名変更しました） Kanagawa//Electronic Components and Semiconductors
  4. 4 null/null
  5. 5 栄徳国際 Tokyo//Trading company/Wholesale
Go to Company Ranking

Memory Product ranking

Last Updated： Aggregation Period:Apr 01, 2026～Apr 28, 2026
This ranking is based on the number of page views on our site.

  1. [Udinfo Corporation] Industrial and Commercial Flash Memory エーアンドエフ・コーポレーション
  2. Ultra-compact data input/output device IC memory KOALA60 マーブル　 エンベデッドプロダクト事業本部　プロダクト事業部
  3. Samsung HBM3E 36GB DRAM 栄徳国際
  4. 4 Corporate-exclusive security USB memory 'Traventy(R)3' イーディーコントライブ イーディーコントライブ株式会社
  5. 5 【ProMOS】A wide range of products including 'DRAM/SDRAM'◎ セイワ 東京本社、関西支社、名古屋営業所、中国無錫　　グループ会社　エレクトロン（長野県松本市）

Memory Product List

61～90 item / All 564 items

Displayed results
Battery-less solution

Battery-less solution

Realization of battery-less wireless devices using wireless power transmission with UHF band radio waves.

Our battery-less solution utilizes the power supply mechanism of RFID equipped with our non-volatile memory FeRAM products, enabling devices added to the tag side to operate without a battery. We provide solutions tailored to our customers' applications. ■ Benefits of the Battery-less Solution <Advantages for Users> - No need for battery replacement (no purchase or storage required) - Improved mobility and greater flexibility in placement due to the absence of cables <Advantages for Equipment Development Manufacturers> - Increased design freedom (thinner and smaller) by reducing the need for battery boxes - Easier waterproofing and dustproofing processes

  • Memory
  • Memory

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
4M-bit FeRAM 'MB85RS4MTY' *4 documents are currently being distributed.

4M-bit FeRAM 'MB85RS4MTY' *4 documents are currently being distributed.

Capable of up to 10 trillion data rewrites even in high-temperature environments of up to 125°C. Suitable non-volatile memory for automotive and industrial machinery applications.

"FeRAM" is a non-volatile memory that uses ferroelectric elements. It offers advantages such as high rewrite endurance, fast writing speed, and low power consumption. In particular, the "MB85RS4MTY" is a 4M-bit FeRAM developed to meet the growing demand for larger capacities, building on the 2M-bit FeRAM "MB85RS2MTY." Even in high-temperature environments of 125°C, it can handle up to 10 trillion data write cycles, making it suitable for automotive applications such as advanced driver-assistance systems (ADAS) and industrial robots. 【Features】 ■ Operates with a wide power supply voltage range of 1.8 to 3.6V ■ Adopts SPI interface ■ Even in high-temperature environments, the operating current is a maximum of 4mA (at 50MHz operation), and the power-down current is a maximum of 30μA, ensuring low power consumption. *We are currently offering materials that introduce detailed features and application examples of "FeRAM." You can view them via "PDF download." Please feel free to contact us for inquiries.

  • fig_01_tcm276-6138595_tcm276-2750236-32.jpg
  • Memory
  • Memory

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Fundamentals of Ferroelectric Memory "FeRAM" - Case Studies in Business Negotiations

Fundamentals of Ferroelectric Memory "FeRAM" - Case Studies in Business Negotiations

Introducing application examples of FeRAM, a non-volatile memory for semiconductors, for automotive, industrial (factory-related), and infrastructure purposes!

We would like to introduce a case study on ferroelectric RAM (FeRAM) for business discussions. In automotive applications such as car navigation systems and dash cameras, there is a demand for "continuous real-time data recording" in memory. The required features are high rewrite endurance, non-volatility, and fast writing. Our product is a memory that possesses these necessary features. "While I want to frequently acquire data, I can't due to memory rewrite limitations." "It is difficult to implement measures for protecting data being written during power interruptions or outages." If you have such challenges, please consider FeRAM. 【Business Case Study (Excerpt)】 <For Automotive Applications> ■ Requirements for Memory - Continuous real-time data recording / Data protection during accidents ■ Required Features - High rewrite endurance / Non-volatility / Fast writing *For more details, please refer to the PDF document or feel free to contact us.

  • Memory
  • Memory

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Non-volatile memory "MB85R8M2TA"

Non-volatile memory "MB85R8M2TA"

Developed 8M-bit FeRAM that guarantees 100 trillion write cycles! Achieves high-speed operation and low power consumption.

The "MB85R8M2TA" is a parallel interface FeRAM that operates with a wide range power supply voltage of 1.8V to 3.6V. It achieves approximately 30% faster access speed compared to our conventional products while reducing operating current by 10%, balancing high-speed operation with low power consumption. It is well-suited for industrial machinery that requires high-speed operation, where SRAM has been used until now. 【Features】 ■ High rewrite endurance (high number of guaranteed rewrite cycles) ■ High-speed writing ■ Low power consumption ■ Over 20 years of mass production experience *For more details, please refer to the PDF document or feel free to contact us.

  • IPROS52273583408912152193.png
  • 2021-12-16_16h00_21.png
  • 2021-12-16_16h00_37.png
  • 2021-12-16_16h00_45.png
  • 2021-12-16_16h02_55.png
  • 2021-12-16_16h02_25.png
  • 2021-12-16_16h03_14.png
  • 2021-12-16_16h03_22.png
  • Memory
  • Memory

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Non-volatile memory 'MB85RQ8MLX'

Non-volatile memory 'MB85RQ8MLX'

Data rewriting at 54MB per second is possible! We have developed an 8Mbit Quad SPI FeRAM.

The "MB85RQ8MLX" is a non-volatile memory that achieves a bandwidth of 54MB/s, equivalent to an SRAM with an access time of 45ns, by incorporating a high-speed serial interface known as Quad SPI. It can replace parallel interface SRAM without compromising memory performance. Additionally, it allows for a significant reduction in pin count compared to traditional parallel interfaces, simplifying the wiring layout on the circuit board and contributing to BOM cost reduction. We are also developing an 8M-bit Quad SPI FeRAM (MB85RQ8MX) that operates at 3.3V (2.7V to 3.6V). 【Features】 ■ Bit configuration: 1,048,576 words × 8 bits ■ Operating frequency: 108MHz (single read using FSTRD command) ■ Write/read endurance: 10^13 times/byte ■ Data retention characteristics: 10 years (+105℃) ■ Operating current: 18mA @ Quad I/O 108MHz *For more details, please refer to the PDF document or feel free to contact us.

  • image_04.png
  • Memory
  • Memory

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Case study of the adoption of non-volatile memory "FeRAM" in PLCs.

Case study of the adoption of non-volatile memory "FeRAM" in PLCs.

No need to fear unexpected power loss: Equipped with FeRAM to save data just before a power interruption and ensure reliable recovery!

A global company that broadly handles factory automation equipment such as PLCs, motion controllers, servo motors, and HMIs. Customers are adopting FeRAM in a wide range of products, starting with PLCs. It was clear that traditional non-volatile memories like EEPROM and FLASH memory had slow write speeds, making it difficult to meet the specifications required by end users. By narrowing down to high-speed non-volatile memory, FeRAM emerged as a candidate due to its strong track record in the market, and its adoption was decided. Customers have increased the number of end users with products that utilize FeRAM, solidifying their reputation and achievements in the market. [Case Overview] In PLCs, FeRAM enables high reliability, ease of maintenance, and a long system lifespan due to its fast write speeds, high rewrite endurance, and excellent data retention. *For more details, please download the PDF or feel free to contact us.*

  • Memory
  • Memory

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Adoption examples of non-volatile memory "FeRAM" in measuring instruments (temperature controllers)

Adoption examples of non-volatile memory "FeRAM" in measuring instruments (temperature controllers)

Enabling millisecond-level temperature control: Achieving high-speed data writing and longevity with FeRAM.

In cases where FeRAM is adopted, there have been instances where the consideration for incorporating FeRAM was initiated due to troubles caused by the insufficient performance of the originally used EEPROM. In terms of rewrite endurance, both FeRAM and SRAM met the requirements; however, FeRAM has the advantage of not requiring battery backup even when the system voltage is lost due to a failure, which led to the decision to adopt FeRAM. The adoption of FeRAM has improved the reliability of the product in terms of accuracy and lifespan, and it has also contributed to the reduction of peripheral circuits needed for using batteries and capacitors, thereby helping to lower development costs for customers with a simpler circuit configuration. [Case Overview] ■ Rapid recovery even in unexpected failures ■ High rewrite endurance capable of recording log data in milliseconds *For more details, please download the PDF or feel free to contact us.

  • Memory
  • Memory

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Reasons for choosing FeRAM for rotary encoders

Reasons for choosing FeRAM for rotary encoders

Perform counter calculations on data in memory even in a power-off state, and overwrite the data with the results after the calculations!

The FeRAM (MB85RDP16LX) for rotary encoders is equipped with an internal counter and FeRAM, allowing it to count the rotation speed of a motor. This means that even with the weak power generated by coil electromotive force, the calculations and writing of data stored in FeRAM can be completed, enabling continuous counting of the motor's rotation speed even in a power-off state. Unlike FLASH memory, FeRAM does not require a boost power supply and does not need a complex internal power sequence. Therefore, there is no waiting time until the power stabilizes, and memory can be accessed immediately after power-up. Additionally, unlike EEPROM, there is no waiting time for write operations, and it has a high rewrite endurance, allowing for data processing in memory (within FeRAM). **Five Reasons to Choose FeRAM for Rotary Encoders** - Fast startup - High-speed writing and high rewrite endurance - Low power consumption - Magnetic field resistance - No battery required *For more details, please download the PDF or feel free to contact us.*

  • ロータリーエンコーダ用FeRAMを選ぶ理由2.png
  • Memory
  • Memory
  • Memory

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
High-speed, high-reliability non-volatile memory "MB85RQ8MX-DS1v1-J"

High-speed, high-reliability non-volatile memory "MB85RQ8MX-DS1v1-J"

New BGA 24-pin is here! Non-volatile memory that achieves high-speed writing and long-term retention! Numerous achievements in industrial equipment such as rotary encoders with non-volatile, low power consumption.

The "MB85RQ8MX-DS1v1-J," developed by RAMXEED Corporation (formerly Fujitsu Semiconductor Memory Solutions), is a non-volatile memory with an 8M-bit configuration that utilizes high-performance FeRAM (ferroelectric memory). It retains data without the need for a battery, achieving both high-speed access and long lifespan. Key features: - Supports Quad SPI (QSPI) with high-speed writing and reading up to 108MHz / 54MB/s - High rewrite endurance of 10¹⁴ cycles (+85°C) - Data retention period of 10 years at 105°C, 95 years at 55°C, and over 200 years at 35°C - Low power consumption design (30µA typ in standby) suitable for power-saving devices - Operating temperature range of -40°C to +105°C, stable operation in industrial and automotive environments - No write latency like flash memory, allowing for immediate writing - Newly added BGA 24-pin package compatible with high-density mounting Example applications: - Industrial equipment, network devices, RAID controllers - IoT devices, cameras, game consoles, automotive electronic control units *Samples are available. It is also suitable for introduction during prototype and evaluation stages.

  • Memory
  • Memory
  • Memory

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
High-speed FeRAM (ferroelectric memory)

High-speed FeRAM (ferroelectric memory)

Achieved a high-speed cycle time and access time of 35ns! For replacing SRAM with battery backup.

At RAMXEED, we have started offering HS (Hot Samples) of our "High-Speed FeRAM (Ferroelectric Memory)." Typical FeRAM has a cycle time of 120ns and an access time of 65ns, but we have achieved significant speed improvements. It is well-suited for applications such as network-related devices, routers, industrial computers, storage, and RAID controllers. 【Features】 - Achieves high-speed cycle time and access time of 35ns - Can retain data without using batteries required for volatile memory, and since the package, pin configuration, and functionality are similar to asynchronous SRAM, it is suitable for replacing SRAM that requires battery backup - Reduces the labor involved in battery replacement and troubles related to battery disconnection - Well-suited for applications such as network-related devices, routers, industrial computers, storage, and RAID controllers *For more details, please download the PDF or feel free to contact us.

  • ramxeed_logo_tate_rgb_基本表示（４色） (2).png
  • Memory
  • Memory

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration

Search Keywords Related to Memory

COPYRIGHT © 2001-2026 IPROS CORPORATION ALL RIGHTS RESERVED.