Gate Drive Unit "VLB512/VLB519-01R"
Coordinating with the RTC signals output from the module itself, achieving short-circuit protection functionality!
The "VLB512-01R/VLB519-01R" is a gate drive unit for SiCMOSFET modules with an RTC circuit built by Mitsubishi Electric Corporation. 【Features】 ■ Simple and easy-to-handle dual-circuit gate drive system ■ Built-in short-circuit detection circuit compatible with the RTC circuit in the module ■ Built-in short-circuit protection circuit ■ Connected to the MOSFET module via harness ■ Built-in isolated DC-DC converter for gate power supply ■ Output gate peak current: +/-30A (max) ■ Isolation withstand voltage: 4000Vrms (1 minute) 【Specifications】 <VLB512-01R> ■ Gate output power: up to 10W ■ Board size: 90×145mm <VLB519-01R> ■ Gate output power: up to 3.75W ■ Board size: 80×130mm *For more details, please refer to the PDF document or feel free to contact us.
- Company:イサハヤ電子
- Price:Other