Focused Ion Beam Processing Observation Device [Examples of Processing Available]
Nano-order processing technology with a few microns or less! Low-damage processing (high precision and high quality) is possible with ultra-low acceleration voltage!
【PR Points】 - Ultra-fine hole processing of φ1um or smaller is possible - Fine structure processing is possible ...etc 【Principle of Focused Ion Beam (FIB) Processing】 By scanning a focused ion beam, concentrated to a few tens of nanometers, across the surface of a sample, secondary electrons generated can be detected, allowing for the observation of microscopic images and processing of the sample surface. The ion source of the FIB uses gallium ions, and when this ion beam is irradiated onto the surface of the sample, secondary electrons are generated from the sample surface. Additionally, since gallium ions are much heavier than electrons, a phenomenon known as sputtering occurs, where atoms constituting the sample are ejected. These ejected atoms become secondary ions and fly away from the sample. By utilizing these phenomena, observation and processing are performed. 【Specifications】 - Maximum work size: 50(X)×50(Y)×10(Z)mm - Minimum processing size (guideline): Groove width: 100nm (up to L/D=3), Hole diameter φ200nm (up to L/D=5) - High-speed and large-area processing with high probe current - Low-damage processing with ultra-low acceleration voltage (for TEM sample preparation, etc.) *Examples and achievements of processing are currently available. For more details, please contact us or download the catalog to view.
- Company:東レ・プレシジョン
- Price:Other