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Non-destructive analysis using magnetic field microscopy and 3D X-ray microscopy.

Non-destructive analysis using magnetic field microscopy and 3D X-ray microscopy.

Analysis of low-resistance short defects, which was difficult with previous non-destructive testing, is now possible!

A magnetic field microscope is a non-destructive analysis technique that measures the magnetic field distribution generated by electric currents from outside the measurement target and estimates the current paths flowing within the measurement target. By observing abnormal areas identified by the magnetic field microscope, such as shorts, with a 3D X-ray microscope (X-ray CT), detailed cause analysis can be performed non-destructively. Please feel free to contact us if you have any inquiries. 【Analysis Flow】 1. Abnormal detection using a magnetic field microscope 2. Observation using a 3D X-ray microscope *For more details, please refer to the PDF document or feel free to contact us.

  • Other analyses

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Analysis of the etch pit shape on SiC wafers

Analysis of the etch pit shape on SiC wafers

Introducing a case where etch pits formed on SiC wafers were observed using a 3D X-ray microscope (X-ray CT)!

In order to promote the spread of power semiconductors, the development of low-defect SiC wafers is underway. X-ray CT is a method that visualizes the shape of materials in three dimensions non-destructively and allows for quantitative evaluation. In the PDF document, you can see the CT images obtained when observing the etched pits formed on SiC wafers using a 3D X-ray microscope (X-ray CT). [Overview] ■ Shape analysis of etched pits using X-ray CT *For more details, please refer to the PDF document or feel free to contact us.

  • Structural Analysis

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Surface and thin film analysis of semiconductors

Surface and thin film analysis of semiconductors

Detailed investigation of surface chemical composition, bonding states, and impurity distribution!

We would like to introduce our "Surface and Thin Film Analysis of Semiconductors." We propose effective analyses for material evaluation and failure mode identification in the process development, process management, and failure analysis of semiconductor devices. We provide detailed information that is useful for research and development, manufacturing processes, and failure analysis by examining the chemical composition, bonding states, and impurity distribution of surfaces. Please feel free to contact us when you need our services. 【Top Surface】 ■Composition: XPS ■Bonding State: XPS ■Contamination: TOF-SIMS, ICP-MS ■Roughness: AFM, SEM *For more details, please download the PDF or feel free to contact us.

  • Contract Analysis

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Analysis of Coating Films on Metal Surfaces

Analysis of Coating Films on Metal Surfaces

The bonding state with metals and the dispersion state of resin material components can be clearly observed!

We would like to introduce our "Coating Film Analysis of Metal Surfaces." When evaluating coating films (resins or ceramics) formed on metal surfaces for purposes such as corrosion prevention, cross-sectional processing using ion milling allows for clear observation of the bonding state with the metal and the dispersion state of the resin material components. Ion milling is used for preparing samples for cross-sectional observation, such as in SEM. Ar ions are irradiated onto the relevant part of the sample, and processing is performed using the sputtering effect. **Advantages of Ion Milling Processing:** - Allows for confirmation of the material in its original state without detaching inclusions. - If voids are observed, it can be identified that they are not due to detachment. - Element distribution confirmation (EDS analysis) enables clear observation of particles within the white resin, the interface with the metal, and the layering of the plating layer on the metal surface. *For more details, please download the PDF or feel free to contact us.*

  • Contract Analysis

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Strain analysis of Si wafers

Strain analysis of Si wafers

The X-ray rocking curve method makes it possible to detect the strain of crystals without shape changes such as warping!

We would like to introduce our "Strain Analysis of Si Wafers." In the manufacturing process of semiconductor devices, residual stress generated during the thin grinding of wafers can lead to product failures, defects, and degradation. In this instance, we will perform mechanical polishing on Si wafers to reduce the surface crystallinity and evaluate the changes in crystallinity before and after polishing using X-ray rocking curve measurements. The X-ray rocking curve method can detect the strain of crystals without shape changes such as warping. 【Technical Overview】 ■ Rocking Curve Measurement - By fixing the detector at the angle position where diffraction occurs and rotating only the sample, the angular distribution of rotation that satisfies the diffraction condition can be measured. - The peak width and intensity of the angular distribution (rocking curve) reflect the variation in the tilt of the crystal planes, serving as an evaluation index for crystallinity. - For single crystals, small strains can be evaluated through high angular resolution measurements. *For more details, please download the PDF or feel free to contact us.

  • Contract Analysis

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