Last Updated： Aggregation Period:Sep 17, 2025～Oct 14, 2025
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181～195 item / All 283 items
Type: Rectifier Diode Maximum Forward Voltage: 22V Maximum Reverse Voltage: 15KV Maximum Forward Current: 100mA Maximum Reverse Current: 2.0uA
2CL2FL Hot selling global market high voltage high current rectifier diode : Peak reverse repetitive voltage: 15KV Average current: 100mA Max foward voltage: 22V Max forward surge current: 10A Leakage current: 2.0uA Dimension: φ4.5*15mm Trr: 100nS
Type: Rectifier Diode Maximum Forward Voltage: 16V Maximum Reverse Voltage: 8KV Maximum Forward Current: 100mA Maximum Reverse Current: 2.0uA
2CL2FF high frequency diode high voltage avalanche diode : Peak reverse repetitive voltage: 8KV Average current: 100mA Max foward voltage: 16V Max forward surge current: 10A Leakage current: 2.0uA Dimension: φ4.5*15mm Trr: 100nS
Type: Rectifier Diode Maximum Forward Voltage: 22V Maximum Reverse Voltage: 20KV Maximum Forward Current: 100mA Maximum Reverse Current: 2uA
LeadSun Ultra fast recovery high efficiency diode 20KV 2CL2FM : Peak reverse repetitive voltage: 20KV Average current: 100mA Max foward voltage: 16V Max forward surge current: 30A Leakage current: 2.0uA Maximum Junction Temperature: 120 °C Storage Temperature: -40~+120 °C Dimension: φ4.5*15mm Trr: 100nS
Type: Rectifier Diode Maximum Forward Voltage: 18V Maximum Reverse Voltage: 10KV Maximum Forward Current: 100mA Maximum Reverse Current: 2.0uA
2CL2FG Original new high voltage fast recovery rectifier diodes 10kv : Peak reverse repetitive voltage: 10KV Average current: 100mA Max foward voltage: 16V Max forward surge current: 10A Leakage current: 2.0uA Dimension: φ4.5*15mm Trr: 100nS
Wavelength is 1300 to 1600 nm! Usable for measurement instruments, data communications, FTTH, and other applications.
This product is a photodiode that uses InGaAs material grown on an InP substrate by MOCVD (Metal Organic Vapor Deposition). It is a front-illuminated type that supports a wide operating wavelength range from 1300nm to 1600nm and can be easily mounted on a submount. Please feel free to contact us when you need assistance. 【Features】 ■ InGaAs material ■ Planar Zn diffusion structure ■ Light receiving area with a diameter of 70μm ■ Front-illuminated photodiode ■ High responsiveness (0.85 A/W over a wide range (1300nm to 1600nm)) *For more details, please download the PDF (English version) or feel free to contact us.
A photodiode with very high sensitivity over a wide wavelength range from 200nm to 950nm.
ElFys' black silicon photodiode is a photodiode that enhances light collection through surface nanostructure technology combined with atomic layer deposition (ALD) coating, allowing for high sensitivity in detecting light over a wide wavelength range. It has an external quantum efficiency of over 96% in the wavelength range of 200nm to 950nm. Particularly in the ultraviolet (UV) region, it exhibits very high sensitivity, with approximately twice the optical responsiveness compared to conventional pn junction photodiodes.
Ultra-high sensitivity SMD package suitable for wearable devices - Black silicon photodiode
The ElFys SM series is a black silicon photodiode in an SMD package that excels in visible and near-infrared light detection performance. ■ Ultra High Sensitivity With ultra high sensitivity, it outputs more photocurrent, improving the energy efficiency of PPG (photoplethysmography) modules. ■ SMD Compact Package The "compact package" and "high light-receiving area fill factor" enable the design of innovative wearable products. It is particularly suitable for health monitoring applications in wearable devices.
Peak repetitive reverse voltage: 12KV; Average forward current: 450mA; Dimensions: 7.5*22mm or 4.5*15mm;
2KV High voltage current rectifier diode CL04-12 : Peak Reverse Repetitive Voltage: 12KV Average Current: 450mA Max Foward Voltage: 16V Max Forward Surge Current: 40A Leakage Current: 5.0uA Maximum Junction Temperature: 130 °C Storage Temperature: -40~+130 °C Dimension: diameter 7.5*22mm or 4.5*15mm Trr: 100nS
Peak repetitive reverse voltage: 12KV; Average forward current: 350 mA; Surge current: 30A.
Place of Origin: Liaoning, China (Mainland) ；Brand Name: Leadsun ；Model Number: CL01-12D ；Type: Rectifier Diode；Package Type: Surface Mount；Max. Forward Voltage: 13V； Max. Reverse Voltage: 12KV； Max. Forward Current: 350mA； Max. Reverse Current: 2uA； small dimension: 5*9mm；Packaging Details:200 pcs in one bag, 25 bags in one carton
The number of ransom demands and suspension of medical services due to ransomware infections is increasing. As IT advances, the risks also grow. Don't forget to implement effective intrusion prevention measures.
In security measures, it is said that "Zero Trust" is sufficient and that boundary control for preventing unauthorized intrusions is outdated, but is that really the case? In the end, there are security holes somewhere that can be exploited, leading to intrusions, requiring days to reboot the system and restore data, during which medical services are halted—this often makes the news. The physical data diode OWCD provides hassle-free boundary control, but did you know there are actually two ways to use it? One is to protect the core without allowing intrusions. The other is to ensure that "nothing goes out," preventing actual damage. By combining it with access authentication and virus intrusion detection mechanisms, you can enhance the overall availability of your hospital's medical management system and protect medical services. Government agencies and major system integrators are rapidly increasing their use of OWCD to effectively reduce costs. Companies that sell access authentication and virus intrusion detection functions are simply remaining silent. We encourage your company to consider utilizing the physical data diode OWCD. Please refer to our website for more information. There are also video explanations available! https://power.mhi.com/jp/group/eng/business/products/owcd
High reliability with airtight sealing!
The "CRD E Series" uses components that provide stable constant current characteristics in a compact size. It is a small device that employs a DO-35 style DHD (Double Heatsink Diode) structure with a DO35 (300mW) package. With hermetic sealing, it offers high reliability, and the materials used are inexpensive and suitable for mass production. Previously, the series had a maximum of "E-153 (15mA)," but now "E-183 (18mA)" has been added. This allows for the supply of a constant current that does not exceed the rated current, making it possible to stabilize the brightness of high-brightness LEDs rated at 20mA with a single component.
High Voltage Rectifier Board 2CLG250KV/3.0A PCB Fast Recovery 250KV
Extreme(Absolute Maximum Rating) Item Symbol Unit Conditions Vlotage Revetitive Peak Reverse Voltage Vrrm KV Ta=25ºC Ir=1.0mA 250.0 Peak Working Reverse Voltage Vrwm KV Ta=25ºC Ir=1.0mA 250.0 No-Revetitive Peak Reverse Voltage Vrsm KV Ta=25ºC Ir=1.0mA 300.0 Average Forward Current Io A 3.0 Surge Forward Output Current Ifsm A 40.0 Operating Ambient Temperature Ta ºC -40~+150 Junction and Storage Temperature Tstg ºC -40~+150
セキュアなリモートメインテナンス回路を使って安全安心に
データダイオードは一方向に通信を制御する装置ですから、双方向通信はできません。 しかし、発信元側の不正侵入防止としては万全の装置ですから、なんとか双方向に使えないか・・・ お客様からそういう声をよく頂戴します。 そこでシチュエーションごとに「コレでいかが」という使い方の一つをご紹介します。 OWCD活用ハイセキュリティ事例：「リモートデスクトップ」です。 Windowsのサービスである「リモートデスクトップ」で使われる通信の中身を分け、各々別のルートで流し、そこにOWCDを入れることで、発信源側への不正アクセス・侵入を防ぎます。 お客様独自のゼロトラストセキュリティシステム等との組み合わせもできます。ＳＩｅｒ様からのご相談もお待ちしています。 お問い合わせは、下記⤵弊社ホームページ内の「お問い合わせ」から どうぞ
