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Photodiode(si) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
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Photodiode Product List

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OPTO DIODE Corporation Si photodiode for XUV-UV detection

OPTO DIODE Corporation Si photodiode for XUV-UV detection

The internal quantum efficiency in the soft X-ray to UV region is nearly 100%.

OPTO DIODE (formerly IRD) has developed a Si photodiode with an internal quantum efficiency of nearly 100% in the soft X-ray to UV range in collaboration with research institutions such as NIST and LLNL. This compact and easy-to-handle Si photodiode is expected to be useful not only in high-energy light research but also in the fields of electrons and ions.

  • Optical Measuring Instruments
  • diode

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Si photodiode 'CP0174AL'

Si photodiode 'CP0174AL'

Halogen-free compatible! Si photodiode suitable for mounting in compact optical units.

The "CP0174AL" is a photodiode capable of measuring light intensity from visible light to near-infrared light (400nm to 1000nm), including lasers and LEDs. The size of the light receiving area is 0.7mm x 0.7mm, and it is halogen-free compliant. With the adoption of a compact COB-2PIN package (2.2mm x 1.22mm), it is suitable for integration into small optical units such as pico projectors. 【Features】 ■ Sensitivity: 0.26A/W @ 405nm, 0.44A/W @ 700nm ■ Light receiving area size: 0.7mm x 0.7mm ■ Compact, thin package: 2.2mm x 1.22mm x 1.0mm COB-2PIN ■ Compatible with solder reflow ■ Lead-free compliant, RoHS compliant *For more details, please refer to the PDF document or feel free to contact us.

  • Sensors

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Si solderable chip photodiode

Si solderable chip photodiode

◆Sensitivity range: 400nm to 1100nm ◆Solderable chip photodiode ◆Solar cells, etc. ◆Photoconductive (solar cell) solderable chip

■Large effective diameter ■Abundant sizes ■High shunt resistance ■With leads or without leads Large active area photodetectors or detectors provide a low-cost approach for applications that require them to be considered "disposable." They can be used with soldered leads or as standalone bare dies. The sensitivity range is from 400nm to 1100nm.

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Si photodiode (TO package) (Si PD)

Si photodiode (TO package) (Si PD)

◆Driven under reverse bias conditions ◆Large diameter, square shapes also available ◆Low dark current ◆Silicon PIN photodiode ◆Peak wavelength approximately 940nm

■Spectral detection range: 400nm to 1100nm LD-PD has implemented an inspection system compliant with MIL-I-45208, and adheres to Telcordia test requirements (TA-NWT-00093) and MIL-STD-883 test methods. 【Parameters: Typical values, Symbols, Test conditions】 ● Round shape φ0.2 to φ8.0mm Detector size (mm): φ0.2, φ0.5, φ1, φ2, φ4, φ5, φ8 Response wavelength range (nm): 400 – 1100・λ Responsivity (A/W): 0.40, 0.45, 0.5, 0.5, 0.5, 0.5, 0.55・Re・VR=15V, λ=900nm Response time (nS): 2, 5, 6, 8, 15, 15, 25tr・VR=15V, RL=50Ω Dark current (nA): 1, 2, 3, 5, 12, 40, 60・ID・VR=15V Reverse voltage (V): 100・VB・IR=10μA Capacitance (pF): 0.8, 1.2, 2.0, 6, 20, 30, 70・Cj・f=1MHz, VR=15V Operating voltage (V): 0 to 15・VR Socket: Coaxial/TO-46/TO-5/TO-8 Saturation optical power: 0.3w/cm2

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Si high-speed photodiode

Si high-speed photodiode

◆High-speed silicon photodiode ◆Peak in the 800nm wavelength range ◆Specifications for high bandwidth applications (from 100Mbps to 1.25GHz)

High-speed silicon photodiodes have a peak in the 800nm wavelength range and are designed for high bandwidth applications (from 100Mbps to 1.25GHz). There are two types of photodiodes: 100Mbps to 622Mbps and 1.25Gbps. 【100Mbps / 622Mbps Photodiode】 The large effective area high-speed silicon detector series from OSI Optoelectronics is designed for short-distance data communication. 【850nm, 1.25 Gbps Photodiode】 The large effective area high-speed silicon PIN photodiode series from OSI Optoelectronics is designed for short-distance data communication at 850nm.

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Silicon photodiode

Silicon photodiode

Silicon photodiode

The OSPD50 series is a large-area general-purpose Si PIN photodiode with excellent sensitivity and fast response. It achieves a terminal capacitance of 6pF and a cutoff frequency of over 25MHz. The active area is available in three standard sizes: 0.8mm x 0.8mm, 1.2mm x 1.2mm, and 2.0mm x 2.0mm, with a compact plastic package size of 4 x 4.8 x 1.8mm. The spectral sensitivity characteristics include three types: for visible to infrared range (λ=320nm~1100nm), for infrared range (λ=760nm~1100nm), and a special sensitivity wavelength range of λ=600nm~720nm. It is also compatible with lead-forming types that enable miniaturization of the mounting area. We offer attractive low prices and short delivery times.

  • Other semiconductors
  • Other optical parts
  • diode

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Si plastic capsule photodiode

Si plastic capsule photodiode

◆Plastic encapsulated photodiode ◆High quality, high reliability ◆High-density package ◆Robust molded package

- Low dark current - Standard lead - SMT - Molded lens - Sideways available - Filter on chip (700nm cutoff) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and over 30 years of experience. We continue to create efficient manufacturing and excellent engineering solutions to meet the requirements of mass production. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying OEM photodetectors for over 30 years. Based on years of experience and efficient manufacturing know-how developed to meet the requirements of mass production, we provide products that excel in reliability and cost performance.

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650nm Pin Photodiode

650nm Pin Photodiode

650nm Pin Photo Diode with an active area of 3.6 mm²

This is a large-area general-purpose Si PIN photodiode with excellent high sensitivity and fast response. The active area is standard at 1.9mm x 1.9mm. The package size is compact at 5.2 x 4.8 x 1.43mm. We also consider customization to meet your specific requirements. Please feel free to contact us.

  • Other semiconductors
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  • diode

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Si position sensor photodiode

Si position sensor photodiode

◆1D or 2D active area effect ◆Compatible with active area size and packaging ◆Position sensing

Segmented, the lateral effect PSD is available in one-dimensional or two-dimensional active areas. The size and packaging of the active area can be adapted to fit a wide range of applications. Since the lateral effect PSD is most suitable for measuring large lateral displacements, segmented detectors are typically used in beam null applications. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products based on efficient manufacturing know-how that meets the requirements of mass production.

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Two-color sandwich photodiode

Two-color sandwich photodiode

Two-Color Sandwich PD

■On InGaAs: Si (1.7, 2.05, 2.2, 2.6μm) ■Effective diameter of the upper light receiving part: 2.0mm or 5.0mm ■Effective diameter of the lower light receiving part: 1mm, 2.0mm or 3.0mm ■On InGaAs (1.7, 2.05, 2.2, 2.6μm): InGaAs (1.7μm) ■Effective diameter of the lower light receiving part: 1mm or 2.0mm ■Standard package: TO-5, TO-8

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Germanium Photodiode (Ge Photodiode)

Germanium Photodiode (Ge Photodiode)

GPD Corporation manufactures power and high-speed germanium transistors, diodes, and infrared photodetectors.

■Various sizes from small to large diameter: 100μm to 25mm ■Wavelength sensitivity range: 800nm to 1800nm ■High linearity: >10dBm ■Various lens options available: biconvex lenses, plano-convex lenses, and ball lenses ■Optical filters: density filters and bandpass filters ■Single and dual-stage electronic cooling available ■4-segment photodiode ■Dual-color (Si/Ge) sandwich photodiode ■Custom accessory packaging available: fiber pigtails, high-reliability pigtails, receptacles, and submounts ■Various packages: TO-46, TO-18, TO-5, TO-8, TO-9, BNC

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Nd-YAG optimized photodiode

Nd-YAG optimized photodiode

◆Nd:YAG sensitivity High voltage resistance ◆Large effective diameter ◆High-speed sensitivity ◆High precision ◆Low capacitance, low noise, and high-speed operation are possible

◆For position detection of YAG laser output light ◆Photodiode optimized for high sensitivity at 1060nm ◆Operates at a high reverse bias voltage (200 volts) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements for mass production.

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InGaAs large-diameter photodiode

InGaAs large-diameter photodiode

◆Large diameter active area size ◆Wavelength range: 1100-1620nm ◆IR sensitivity detector

The FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm, and 3mm are part of OSI Optoelectronics' IR sensitive detectors that have excellent responsiveness from 1100nm to 1620nm (also with weak signal sensitivity). OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying photodetectors as an OEM for over 30 years. Based on years of experience, they provide reliable and cost-effective products based on efficient manufacturing know-how that meets the requirements for mass production.

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GaAs photodiode OSI optoelectronics

GaAs photodiode OSI optoelectronics

◆GaAs photodiode ◆Semiconductor optical sensor based on GaAs ◆Sensitive from 400 to 850 nm

This is a semiconductor optical sensor based on GaAs that generates photocurrent when incident light enters the active area. It generally has sensitivity from 400 to 850 nm. 【Photodiode Array】 FCI-GaAs-XXm is a GaAs PIN photodetector array designed for high-speed fiber receivers and application monitors, consisting of 4 to 12 elements. ● Specifications [Model Name: Active Area, Responsivity, Capacitance, Dark Current, Maximum Reverse Voltage, Maximum Forward Current, Bandwidth, Breakdown Voltage, Package] - FCI-GaAS-4M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-4M - FCI-GaAS-12M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-12M

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