Last Updated： Aggregation Period:Jun 24, 2026～Jul 21, 2026
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181～210 item / All 288 items
Peak reverse voltage: 20KV; Average forward current: 20mA; Surge current: 2A; Dimensions: φ3*12mm; Reverse recovery time: 100nS.
High voltage fast recovery rectifier diodes 20KV/20mA : Peak reverse repetitive voltage: 20KV Average current: 20mA Max foward voltage: 55V Max forward surge current: 2A Leakage current: 2.0uA Dimension: φ3*12mm Trr: 100nS
Type: Rectifier diode Maximum forward voltage: 16V Maximum reverse voltage: 15KV Maximum forward current: 550mA Maximum reverse current: 5.0uA
high voltage high frequency rectifier diode 2CL15KV/550mA : Peak reverse repetitive voltage: 15KV Average current: 550mA Max foward voltage: 16V Max forward surge current: 45A Leakage current: 5.0uA Dimension: 7.5*22mm Trr: 100nS
Type: Rectifier Diode Maximum Forward Voltage: 22V Maximum Reverse Voltage: 15KV Maximum Forward Current: 100mA Maximum Reverse Current: 2.0uA
2CL2FL Hot selling global market high voltage high current rectifier diode : Peak reverse repetitive voltage: 15KV Average current: 100mA Max foward voltage: 22V Max forward surge current: 10A Leakage current: 2.0uA Dimension: φ4.5*15mm Trr: 100nS
Type: Rectifier Diode Maximum Forward Voltage: 16V Maximum Reverse Voltage: 8KV Maximum Forward Current: 100mA Maximum Reverse Current: 2.0uA
2CL2FF high frequency diode high voltage avalanche diode : Peak reverse repetitive voltage: 8KV Average current: 100mA Max foward voltage: 16V Max forward surge current: 10A Leakage current: 2.0uA Dimension: φ4.5*15mm Trr: 100nS
Type: Rectifier Diode Maximum Forward Voltage: 22V Maximum Reverse Voltage: 20KV Maximum Forward Current: 100mA Maximum Reverse Current: 2uA
LeadSun Ultra fast recovery high efficiency diode 20KV 2CL2FM : Peak reverse repetitive voltage: 20KV Average current: 100mA Max foward voltage: 16V Max forward surge current: 30A Leakage current: 2.0uA Maximum Junction Temperature: 120 °C Storage Temperature: -40~+120 °C Dimension: φ4.5*15mm Trr: 100nS
Type: Rectifier Diode Maximum Forward Voltage: 18V Maximum Reverse Voltage: 10KV Maximum Forward Current: 100mA Maximum Reverse Current: 2.0uA
2CL2FG Original new high voltage fast recovery rectifier diodes 10kv : Peak reverse repetitive voltage: 10KV Average current: 100mA Max foward voltage: 16V Max forward surge current: 10A Leakage current: 2.0uA Dimension: φ4.5*15mm Trr: 100nS
Wavelength is 1300 to 1600 nm! Usable for measurement instruments, data communications, FTTH, and other applications.
This product is a photodiode that uses InGaAs material grown on an InP substrate by MOCVD (Metal Organic Vapor Deposition). It is a front-illuminated type that supports a wide operating wavelength range from 1300nm to 1600nm and can be easily mounted on a submount. Please feel free to contact us when you need assistance. 【Features】 ■ InGaAs material ■ Planar Zn diffusion structure ■ Light receiving area with a diameter of 70μm ■ Front-illuminated photodiode ■ High responsiveness (0.85 A/W over a wide range (1300nm to 1600nm)) *For more details, please download the PDF (English version) or feel free to contact us.
A photodiode with very high sensitivity over a wide wavelength range from 200nm to 950nm.
ElFys' black silicon photodiode is a photodiode that enhances light collection through surface nanostructure technology combined with atomic layer deposition (ALD) coating, allowing for high sensitivity in detecting light over a wide wavelength range. It has an external quantum efficiency of over 96% in the wavelength range of 200nm to 950nm. Particularly in the ultraviolet (UV) region, it exhibits very high sensitivity, with approximately twice the optical responsiveness compared to conventional pn junction photodiodes.
Ultra-high sensitivity SMD package suitable for wearable devices - Black silicon photodiode
The ElFys SM series is a black silicon photodiode in an SMD package that excels in visible and near-infrared light detection performance. ■ Ultra High Sensitivity With ultra high sensitivity, it outputs more photocurrent, improving the energy efficiency of PPG (photoplethysmography) modules. ■ SMD Compact Package The "compact package" and "high light-receiving area fill factor" enable the design of innovative wearable products. It is particularly suitable for health monitoring applications in wearable devices.
Peak repetitive reverse voltage: 12KV; Average forward current: 450mA; Dimensions: 7.5*22mm or 4.5*15mm;
2KV High voltage current rectifier diode CL04-12 : Peak Reverse Repetitive Voltage: 12KV Average Current: 450mA Max Foward Voltage: 16V Max Forward Surge Current: 40A Leakage Current: 5.0uA Maximum Junction Temperature: 130 °C Storage Temperature: -40~+130 °C Dimension: diameter 7.5*22mm or 4.5*15mm Trr: 100nS
Peak repetitive reverse voltage: 12KV; Average forward current: 350 mA; Surge current: 30A.
Place of Origin: Liaoning, China (Mainland) ；Brand Name: Leadsun ；Model Number: CL01-12D ；Type: Rectifier Diode；Package Type: Surface Mount；Max. Forward Voltage: 13V； Max. Reverse Voltage: 12KV； Max. Forward Current: 350mA； Max. Reverse Current: 2uA； small dimension: 5*9mm；Packaging Details:200 pcs in one bag, 25 bags in one carton
Physically restrict Ethernet communication to one direction! Simple and clear security.
The "Data Diode OWCD" is a one-way communication restriction device that is effective when it is acceptable to completely block external access to internal networks, such as in cases where email and web browsing are not conducted over the line, and when it is necessary to securely restrict communication in one direction. Unlike gateways, firewalls, and routers, there is no need for logical settings to restrict communication in one direction. We also offer models equipped with send/receive PCs, so please feel free to inquire. 【Examples】 ■ Remote monitoring of thermal power plants (proven results in overseas: South Korea, Southeast Asia, Europe) ■ Critical public infrastructure ■ Offices handling a large amount of personal information ■ Design and engineering firms dealing with intellectual property ■ Departments such as factories and construction companies *For more details, please download the PDF or feel free to contact us.
Laser diode manufacturer made in America.
Sheaumann Laser, Inc. is an American laser diode manufacturer that provides groundbreaking solutions to complex challenges across various fields. Founded in 2005 by Jim Hsieh, a pioneer in the packaged semiconductor industry, Sheaumann's predecessor, Lasertron, became a major manufacturer of lasers during the peak era of fiber optic communication technology development in the 1980s and 1990s. In 2015, Sheaumann merged with Axcel Photonics, adding epitaxial growth and wafer processing capabilities to Sheaumann's design and packaging expertise. In 2019, the company received a grant from the state of Massachusetts, which allowed it to expand its wavelength range and relocate to a new headquarters. In an era where laser manufacturing companies frequently change ownership and shift production overseas, we remain steadfast in our vision of maintaining manufacturing in the United States. Our products include various packaged laser diodes with wavelengths ranging from 785 to 1560 nm.
High reliability with airtight sealing!
The "CRD E Series" uses components that provide stable constant current characteristics in a compact size. It is a small device that employs a DO-35 style DHD (Double Heatsink Diode) structure with a DO35 (300mW) package. With hermetic sealing, it offers high reliability, and the materials used are inexpensive and suitable for mass production. Previously, the series had a maximum of "E-153 (15mA)," but now "E-183 (18mA)" has been added. This allows for the supply of a constant current that does not exceed the rated current, making it possible to stabilize the brightness of high-brightness LEDs rated at 20mA with a single component.
High Voltage Rectifier Board 2CLG250KV/3.0A PCB Fast Recovery 250KV
Extreme(Absolute Maximum Rating) Item Symbol Unit Conditions Vlotage Revetitive Peak Reverse Voltage Vrrm KV Ta=25ºC Ir=1.0mA 250.0 Peak Working Reverse Voltage Vrwm KV Ta=25ºC Ir=1.0mA 250.0 No-Revetitive Peak Reverse Voltage Vrsm KV Ta=25ºC Ir=1.0mA 300.0 Average Forward Current Io A 3.0 Surge Forward Output Current Ifsm A 40.0 Operating Ambient Temperature Ta ºC -40~+150 Junction and Storage Temperature Tstg ºC -40~+150
Zero Trust is not a philosophy of "discarding boundaries." What is the "final boundary" required in all networks?
Current cyber attacks are targeting "operational shutdown" rather than "data leakage." OWCD physically disconnects communication in one direction, fundamentally cutting off either the entry or exit. It builds a "zero trust wall" in hardware that cannot be breached by software, eliminating opportunities for attackers. It is perfectly compatible with zero trust and is chosen as the "last bastion" of multi-layered defense. Infostealer malware can send information collected from the victim's computer to the attacker's computer in about a minute. Moreover, it cleverly bypasses communication monitoring. By the time you realize it, the attacker has already penetrated deep into the internal systems, allowing them to cause real damage at any time they choose. While humans are still making judgments, the attack quietly progresses, and the damage expands. If you allow reconnaissance activities by viruses, the next risk will be an immediate shutdown. Therefore, communication lines can be cut off. Critical infrastructure, production facilities, IoT, SYS-LOG lines—once breached, these areas jeopardize business continuity. It is also essential to have a mechanism to seal off the "exit" to the outside where information-stealing malware can send out extracted information. That’s OWCD. There is an explanatory video at the related link below! This technology is patented by Mitsubishi Heavy Industries, Ltd.
Achieving high efficiency, low loss, and high-temperature operation simultaneously to accelerate new power conversion!
We would like to introduce the "Sic SiC Diodes" that we handle. Innovative SiC technology that achieves performance surpassing conventional Si. It simultaneously realizes high efficiency, low loss, and high-temperature operation, accelerating new power conversion. Please feel free to consult us when you need assistance. 【Products (partial)】 ■ UJ3D1725K2 ■ UJ3D1250K2 ■ UJ3D1250K ■ UJ3D1220KSD ■ UJ3D1220K2 *For more details, please download the PDF or feel free to contact us.
Choosing the appropriate TVS (Transient Voltage Suppressor) protects the product from latch-up.
With the development and improvement of USB interfaces and protocols, many smart products are adopting USB Type-C as their connection interface. This allows for the support of diverse video, audio, and data transmission at higher transfer speeds. At the same time, signal transmission has become more susceptible to interference from external power surges. Therefore, the use of TVS diodes for surge protection should be more stringent. However, if users pursue only TVS devices with low clamp voltages without considering other parameters such as operating voltage, there is a risk of affecting real-time communication on the Type-C interface or, in extreme cases, causing latch-up due to EOS (electrical overload), which could damage the circuit. To achieve proper and effective transient voltage surge protection in the interfaces of electronic products with complex signal and power lines, adding TVS diodes to the interface will be the most effective protection solution.
Important infrastructure OT medical equipment cannot connect to the outside. However, it is problematic to restrict communication in one direction, especially for remote maintenance. There is a solution.
Previously, Microsoft provided remote desktop software (functionality) for remote control. Based on this, we offer a solution where only specific PCs can access devices on a network protected by a data diode for remote maintenance. This is used in conjunction with OWC. Data diodes are offered by multiple manufacturers, but only OWC can propose such solutions. While this technology alone does not solve everything, we will assist in building a system that aligns with your usage environment, using this as the core. For more information about OWC, please refer to our company website. There are also video explanations available! For inquiries, please use the related link below.
To securely obtain information in the supply chain, this method allows us to strengthen cybersecurity even with partners at different levels of response.
A data diode that restricts communication in one direction, specifically the physical data diode "OWCD" that truly cuts off the line in one direction, can help create a network that protects the supply chain when used effectively. In making meaningful use of the internet, the crucial systems can: - Shut out unauthorized intrusions from the source - Shut out information leaks on the receiving side. How do you send information between suppliers? Are you struggling to create a database integration system? While it may lack the glamour of IT technology, often, simple file-based information transmission is sufficient. Would it be better to simplify with files rather than create a system with many unseen parts? Utilizing JSON is recommended. Zero Trust measures are adept at preventing malware lateral movement and authentication hijacking, but they often overlook boundary restrictions. Combining with OWCD allows for multi-layered defense. There are increasing examples of SIers utilizing this in their proposals to clients. Originality can also be achieved by combining with various check functions. Please make use of this to strengthen your cybersecurity. For inquiries, please visit our website through the related link below.
Connecting business equipment networks that handle production devices and medical equipment with general office systems. For cybersecurity at this boundary, start with this.
- Let's collect operational information from the PLC and visualize it. - Let's actively improve yield and quality, and monitor conditions using IoT for factory monitoring. - Let's connect medical devices, electronic medical record systems, and medical administrative systems to enhance the efficiency of expanding healthcare. However, there are high barriers to this: "Our devices are vulnerable from a security standpoint, so they must be completely isolated." This is the mindset across various industries. To securely protect IT critical assets that are potentially at risk of external intrusion, we should ensure that they remain completely independent from the outside while allowing information to be shared internally. That's where the data diode "OWCD" comes in. It physically shuts out signals from the outside! Zero trust is actually based on measures for horizontal expansion and upgrading authentication levels. Ransomware attacks ultimately break passwords; it's just a matter of time. The OWCD itself requires no setup work and can be used simply and clearly. Its strength is different from routers and firewalls. In Japan, as well as in the United States and Europe, one of the key measures for cybersecurity is the one-way communication restriction that can be achieved with "OWCD." This technology is patented by Mitsubishi Heavy Industries, Ltd. There is an explanatory video linked below! Feel free to contact us.
Overview of light detection elements! Free technical materials available!
A photodiode (PD) is a light-receiving element that converts changes in light intensity into electrical signals (voltage, current) when light is irradiated onto the PN junction of a semiconductor. Photodiodes are classified into three types based on their characteristics and structure: PN-PD, PIN-PD, and APD. Understanding the differences in their characteristics allows for appropriate selection based on application. 【Overview of Contents】 - What is a photodiode? - Applications of photodiodes - Structure and principle of photodiodes - Equivalent circuit - Phototransistor We are offering a free explanatory document on the overview of light detection elements (photodiodes, phototransistors, and optical power supply elements)! Please download the PDF for more details. For more information about the photodiodes we handle, please feel free to contact us.
Type: Rectifier Diode; Maximum Forward Voltage: 54V; Maximum Reverse Voltage: 40KV; Maximum Forward Current: 10.0A; Maximum Reverse Current: 10.0μA
Non-corrosive epoxy resin case 40KV/10.0A silicon Controlled Rectifier : Feature: Avalanche characteristic More sizes available vacuum molded, non-corrosive epoxy resin case Tj:-40℃——+120℃ Application: Electrostatic cleaning High Voltage testing equipment General purpose high voltage rectigier
It is predicted to grow dramatically from 2.34 billion US dollars in 2023 to 7.03 billion US dollars by 2031.
Fairfield Market Research is a research company that publishes highly relevant market data and insightful detailed reports. The SiC diode market is expected to experience significant growth, estimated to reach $2.65 billion by 2024, with a projected compound annual growth rate (CAGR) of 14.9% from 2024 to 2031. SiC diodes surpass traditional silicon diodes due to their excellent performance characteristics, including high-temperature resistance, low on-resistance, and superior voltage and frequency capabilities. These diodes are primarily used in critical power systems across various sectors, including electric vehicles, data centers, base stations, and smart grids. This report provides a detailed analysis of the SiC diode market. It analyzes the market by forward current, reverse voltage, application, and region, and also discusses the strategies and challenges of key market players in detail.
Type: Rectifier Diode; Maximum Forward Voltage: 75V; Maximum Reverse Voltage: 30KV; Maximum Forward Current: 0.1A; Maximum Reverse Current: 5.0μA
Non-corrosive epoxy resin case 30KV/0.1A electroplating rectifier : Feature: Avalanche characteristic More sizes available vacuum molded, non-corrosive epoxy resin case Tj:-40℃——+120℃ Application: Electrostatic cleaning High Voltage testing equipment General purpose high voltage rectigier
Type: Rectifier Diode; Maximum Forward Voltage: 45V; Maximum Reverse Voltage: 40KV; Maximum Forward Current: 2.0A; Maximum Reverse Current: 2.0μA
Have anticorrosion in the surface 40KV/2.0A silicone controlled rectifier : Feature: Avalanche characteristic More sizes available vacuum molded, non-corrosive epoxy resin case Tj:-40℃——+120℃ Application: Electrostatic cleaning High Voltage testing equipment General purpose high voltage rectigier
Type: Rectifier Diode; Maximum Forward Voltage: 30V; Maximum Reverse Voltage: 20KV; Maximum Forward Current: 1.5A; Maximum Reverse Current: 5.0μA
Non-corrosive epoxy resin case 20KV/1 .5A bridge rectifier scr thyristor : Feature: Avalanche characteristic More sizes available vacuum molded, non-corrosive epoxy resin case Tj:-40℃——+120℃ Application: Electrostatic cleaning High Voltage testing equipment General purpose high voltage rectigier
