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Dislocation observation using the SEM-ECCI method

Dislocation observation using the SEM-ECCI method

The observation of dislocations in metallic materials has traditionally been done using TEM, but it has now become possible to observe dislocations using SEM.

An essential understanding of the processes of deformation and fracture in metallic materials requires the visualization of dislocation states. Traditionally, transmission electron microscopy (TEM) has been used to observe dislocations in metallic materials, but in recent years, observations using scanning electron microscopy (SEM) have also been attempted. This time, our company has also become capable of observing dislocations using SEM.

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Observation of dislocations in GaN using the SEM-ECCI method.

Observation of dislocations in GaN using the SEM-ECCI method.

Using the SEM-ECCI method, observation becomes possible with easy preprocessing! We will also introduce measurement examples of single crystal GaN.

Our company conducts dislocation observation of GaN using the SEM-ECCI method. In power semiconductors such as Gallium Nitride (GaN), dislocations present during manufacturing are considered factors that lead to decreased device performance and shortened lifespan. Dislocation observation in semiconductors is mainly performed using Transmission Electron Microscopy (TEM) or the Etch Pit method; however, using the SEM-ECCI method allows for observation with easy pre-treatment. [Measurement Example] - Sample: Single crystal GaN (wafer with GaN deposited on a sapphire substrate) - Surface Orientation: C-plane (0001) ±0.5° - GaN Film Thickness: 4.5 ± 0.5 μm - Measurement Conditions: Backscattering mode *For more details, please refer to the related links or feel free to contact us.

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Observation of GaN defects using forward scattering electrons in SEM.

Observation of GaN defects using forward scattering electrons in SEM.

Dislocations and steps (tiny steps) as well as small orientation differences in power semiconductors such as GaN can be observed.

In power semiconductors such as GaN, atomic-level defects affect performance degradation. By evaluating forward-scattered electrons using an EBSD detector, it becomes possible to observe dislocations as well as steps (small height differences) and micro-orientation differences.

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