Example: Particle-PLUS: GEC-CCP Device Plasma Analysis
Introduction to Particle-PLUS Analysis Case: "Plasma Analysis of GEC-CCP Device" 3D Simulation Case
This is a 3D analysis case related to CCP (Capacitively Coupled Plasma) etching, which is one of the representative dry etching methods. Particle-PLUS specializes in plasma analysis within vacuum chambers and can perform simulations of etching rates and other parameters at high speed. ◇ Features of 'Particle-PLUS' - Excels in low-pressure plasma analysis. - By combining axisymmetric models with mirror-symmetric boundary conditions, it can obtain results quickly without the need for full device simulations. - Specializes in plasma simulations for low-pressure gases, where fluid modeling is challenging. - Supports both 2D and 3D, allowing efficient analysis even for complex models. - As a strength of our in-house developed software, customization to fit customer devices is also possible. ◆ Outputs various calculation results ◆ - Potential distribution - Density distribution/temperature distribution/generation distribution of electrons and ions - Particle flux and energy flux to the walls - Energy spectrum of electrons and ions at the walls - Density distribution/temperature distribution/velocity distribution of neutral gas and more. *For more details, please feel free to contact us.
- Company:ウェーブフロント 本社
- Price:Other