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Analysis Product List and Ranking from 182 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Oct 08, 2025～Nov 04, 2025
This ranking is based on the number of page views on our site.

Analysis Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Oct 08, 2025～Nov 04, 2025
This ranking is based on the number of page views on our site.

  1. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  2. ビーエルテック Tokyo//Testing, Analysis and Measurement
  3. 同仁グローカル Kumamoto//others
  4. 4 オーハウス コーポレーション 日本支社 Tokyo//Industrial Electrical Equipment
  5. 5 西進商事 Hyogo//Industrial Machinery
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Analysis Product ranking

Last Updated： Aggregation Period:Oct 08, 2025～Nov 04, 2025
This ranking is based on the number of page views on our site.

  1. Analysis, precision balance │ EXPLORER series *Comprehensive catalog available オーハウス コーポレーション 日本支社
  2. Seawater Nutrient Measurement Device Quattro ビーエルテック
  3. Certified single-element and mixed standard solutions for ICP-AES/ICP-MS wet analysis. 西進商事
  4. 4 [Information] Understanding Chemikan in 3 Minutes ケミカン
  5. 5 Total Nitrogen and Total Phosphorus Analysis Device Quattro ビーエルテック

Analysis Product List

376～390 item / All 655 items

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[Analysis Case] High-Precision Quantification of the sp2/(sp2+sp3) Ratio of DLC Films

[Analysis Case] High-Precision Quantification of the sp2/(sp2+sp3) Ratio of DLC Films

High-precision analysis using XAFS

DLC (diamond-like carbon) films, which are widely used as coating materials in various fields, are composed of a mixture of carbon elements with sp3 hybrid orbitals corresponding to a diamond structure and carbon elements with sp2 hybrid orbitals corresponding to a graphite structure when viewed from a microscopic perspective. One indicator that determines the properties of DLC films is the sp2/(sp2+sp3) ratio. High-precision quantification of the sp2/(sp2+sp3) ratio in DLC films is possible using XAFS.

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Precautions for Low-Temperature Photoluminescence Measurement

Precautions for Low-Temperature Photoluminescence Measurement

Photoluminescence method

- Photoluminescence measurement (PL measurement) can be conducted not only at room temperature but also by placing the sample in a cryostat for low-temperature measurements. Low-temperature measurements tend to show an increase in peak intensity and a decrease in peak full width at half maximum compared to room temperature measurements, which may provide insights into various energy levels. - Below, we will explain the precautions for low-temperature measurements and the differences in spectral shapes between room temperature and low-temperature measurements.

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[Analysis Case] Evaluation of GaN Crystal Growth by XRD and EBSD

[Analysis Case] Evaluation of GaN Crystal Growth by XRD and EBSD

Cross-sectional mapping allows for the evaluation of the crystal growth of GaN.

Gallium nitride (GaN) is used as a material for LEDs and power devices due to its high thermal conductivity and high breakdown voltage characteristics. In the manufacturing process of these products, it is essential to produce high-quality GaN crystals without crystal defects that can affect device characteristics. This document presents a case study evaluating the crystal state of samples in which c-GaN crystals were grown at high speed on c-plane GaN substrates (c-GaN substrates).

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Valence evaluation of metal oxides by chemical shift

Valence evaluation of metal oxides by chemical shift

XPS: X-ray Photoelectron Spectroscopy

In XPS analysis, the binding state evaluation of the material surface is conducted by observing the energy of photoelectrons obtained through X-ray irradiation. It allows for the assessment of whether metal elements are in an oxidized state, and for elements with significant energy shifts (chemical shifts) due to oxidation, it also enables the evaluation of the presence and proportion of multiple valences. Below are the main metal elements and oxides for which multiple valence evaluations are possible.

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Evaluation of the orientation angle of organic film materials

Evaluation of the orientation angle of organic film materials

XAFS: X-ray Absorption Fine Structure

Self-assembled monolayers (SAMs), which are oriented organic films, have their functions and properties, such as surface wettability and adsorption, altered by orientation and orientation angle. Using XAFS with synchrotron radiation, it is possible to evaluate the orientation and orientation angle of organic film materials by analyzing the X-ray incidence angle dependence of peak intensity.

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[Analysis Case] Evaluation of Layer Structure of Organic EL Devices

[Analysis Case] Evaluation of Layer Structure of Organic EL Devices

Preventing oxidation degradation during cutting processing under N2 atmosphere.

Organic EL devices are prone to degradation in the atmosphere, so processing under an N2 atmosphere is necessary. We present the measurement results of Alq3 for organic EL devices that were machined in an N2 atmosphere and left in the atmosphere for 30 minutes, compared to those that were not exposed to the atmosphere. When left in the atmosphere, there is a strong tendency for peaks associated with oxygen to appear in Alq3. In the N2 atmosphere, there is a strong tendency for the parent ions of Alq3 to be observed. By avoiding exposure to the atmosphere, results closer to the true state can be obtained.

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[Analysis Case] Evaluation of the Diffusion Layer of SiCMOSFET Using SCM and SMM

[Analysis Case] Evaluation of the Diffusion Layer of SiCMOSFET Using SCM and SMM

You can evaluate the p/n polarity and carrier concentration distribution of the SiC device's diffusion layer.

A cross-section of the SiC Planer Power MOSFET was fabricated, and the p/n polarity distribution of the diffusion layer was evaluated using SCM (Scanning Capacitance Microscopy), while the carrier concentration distribution was qualitatively assessed using SMM (Scanning Microwave Microscopy). From both sets of data, it was found that a p-type Body layer is formed in a two-layer structure around the n+ type Source layer, and that a Channel Epitaxial layer exists directly beneath the gate. At the edge of the Channel Epitaxial layer, a partial decrease in concentration was observed in the Source layer.

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[Analysis Case] Evaluation of Additives in Polymer Materials

[Analysis Case] Evaluation of Additives in Polymer Materials

Qualitative analysis of components by LC/MS.

Many additives, including plasticizers, are used in polymer materials such as resin products. We present a case study on the qualitative analysis of additives contained in commercially available PVC resin. The components eluted by immersion in an organic solvent were qualitatively analyzed using LC/MS. As a result, components estimated to be DEHP (DOP) as a plasticizer and epoxy fat (plasticizer/stabilizer) were detected. By using standard samples, it is also possible to quantify each detected additive component.

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Concentration analysis of volatile components using a sample concentration needle.

Concentration analysis of volatile components using a sample concentration needle.

GC/MS: Gas Chromatography-Mass Spectrometry

The sample concentration needle is a device that concentrates volatile components by sucking them from vials or sampling bags and adsorbing the volatile components passing through the needle onto an adsorbent medium, which is then introduced into GC/MS. There are different adsorbent media available, such as "for organic solvents," "for fatty acids," and "for amines," which are used depending on the target components. In the headspace method used for the analysis of volatile components, it is common to heat the sample to obtain sensitivity; however, in analyses using the sample concentration needle, heating is not necessary, allowing only the volatile components to be supplied for GC/MS analysis at room temperature.

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[Analysis Case] Low-Temperature PL Spectrum of Si After Ion Implantation Annealing Treatment

[Analysis Case] Low-Temperature PL Spectrum of Si After Ion Implantation Annealing Treatment

It is possible to confirm the recovery of crystallinity due to irradiation defects and annealing.

In the fabrication of Si-based semiconductor devices, various processes such as ion implantation and annealing are performed. It is considered important to confirm the degree of irradiation defects and the extent of crystallinity recovery before and after these processes in order to control the manufacturing process. Photoluminescence (PL) measurements at low temperatures are one effective means of investigating these aspects. An example of PL measurements of samples that underwent ion implantation on a Si substrate followed by annealing treatment is presented.

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[Analysis Case] Evaluation of Composition Distribution of Capsule-type Drugs

[Analysis Case] Evaluation of Composition Distribution of Capsule-type Drugs

Imaging evaluation is possible from the overall view to local distribution.

TOF-SIMS allows mass imaging analysis of samples ranging from micrometers to centimeters in size. We conducted mass imaging analysis using TOF-SIMS on the cross-section of a capsule-type drug. We performed cross-section processing and present imaging examples focusing on the entire drug (approximately 7mm x 20mm) and a single granule inside it (approximately 500μm in diameter).

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Evaluation of organic contamination using a wafer analyzer with GC-MS.

Evaluation of organic contamination using a wafer analyzer with GC-MS.

GC/MS: Gas Chromatography-Mass Spectrometry

The WA (Wafer Analyzer) is a device that heats wafers with a diameter of φ76 to 300mm to elevate their temperature, gasifying organic contaminants adhered to the wafer surface and trapping them in a collection tube. As a result, it can concentrate compounds such as phthalate esters and cyclic siloxanes, which are considered causes of device characteristic impacts and manufacturing troubles, allowing for high-sensitivity measurement using GC/MS. Quantification using hexadecane is also possible. - Evaluation of organic contaminants on one side of the wafer is possible. - Detection of easily volatile components is possible since vacuum pumping is not required. - Organic components can be detected with high sensitivity (for 300mm wafers, on the order of 0.01ng/cm²). - Quantification using hexadecane conversion is possible.

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[Analysis Case] Image Analysis of Micro Beer

[Analysis Case] Image Analysis of Micro Beer

It is possible to evaluate the distribution of micro-regions.

With the miniaturization of circuits, the design and development of micro vias for interlayer connections require an understanding of the quality of filling. TOF-SIMS is an effective method for evaluating the results, as it can simultaneously perform elemental analysis and analyze molecular information of organic and inorganic substances, as well as enable image analysis. This document presents a case study analyzing a sample with Cu filled in vias of approximately 0.5μm in diameter on a Si substrate. The analysis of positive ion results confirmed the distribution of Cu and Si. Measurement method: TOF-SIMS Product fields: LSI, memory, electronic components Analysis objectives: Composition distribution evaluation, failure analysis, defect analysis For more details, please download the document or contact us.

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[Analysis Case] Qualitative Analysis of Organometallic Complexes under Atmosphere Control

[Analysis Case] Qualitative Analysis of Organometallic Complexes under Atmosphere Control

Mass spectrometry using TOF-SIMS is possible under conditions that are not affected by oxidation.

Titanium tetraalkoxide is an essential reagent for the Katsuki-Sharpless asymmetric epoxidation and is affected by oxidation in the atmosphere. In this case, we present an investigation using TOF-SIMS on how titanium tetraalkoxide (titanium tetra-isopropoxide) changes under controlled atmosphere and after exposure to air. In MST, the evaluation of the complex can be performed without the influence of atmospheric oxidation due to atmosphere control. Measurement method: TOF-SIMS Product fields: Biotechnology, Pharmaceuticals, Cosmetics, Daily necessities Analysis purpose: Deterioration investigation, Reliability assessment For more details, please download the materials or contact us.

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Evaluation of metal contamination on the Si wafer surface

Evaluation of metal contamination on the Si wafer surface

ICP-MS: Inductively Coupled Plasma Mass Spectrometry

The purpose of evaluating metal contamination on the surface of Si wafers using ICP-MS includes not only the contamination assessment of the Si wafers themselves but also the evaluation of contamination within semiconductor devices and the assessment of the working environment due to Si wafer exposure. Therefore, the analysis of the Si wafer surface is conducted for various purposes. ICP-MS analysis can sensitively obtain the amount of metal contamination on the surface of Si wafers, and it is also possible to specify the evaluation area according to the purpose.

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