4M-bit FeRAM 'MB85RS4MTY' *4 documents are currently being distributed.
Capable of up to 10 trillion data rewrites even in high-temperature environments of up to 125°C. Suitable non-volatile memory for automotive and industrial machinery applications.
"FeRAM" is a non-volatile memory that uses ferroelectric elements. It offers advantages such as high rewrite endurance, fast writing speed, and low power consumption. In particular, the "MB85RS4MTY" is a 4M-bit FeRAM developed to meet the growing demand for larger capacities, building on the 2M-bit FeRAM "MB85RS2MTY." Even in high-temperature environments of 125°C, it can handle up to 10 trillion data write cycles, making it suitable for automotive applications such as advanced driver-assistance systems (ADAS) and industrial robots. 【Features】 ■ Operates with a wide power supply voltage range of 1.8 to 3.6V ■ Adopts SPI interface ■ Even in high-temperature environments, the operating current is a maximum of 4mA (at 50MHz operation), and the power-down current is a maximum of 30μA, ensuring low power consumption. *We are currently offering materials that introduce detailed features and application examples of "FeRAM." You can view them via "PDF download." Please feel free to contact us for inquiries.
- Company:RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました)
- Price:Other