Quantum dot laser epitaxy
Contributes to miniaturization and cost reduction of devices without the need for an isolator! Consistent support from custom prototypes of epi-wafers to mass production.
This is a 1300 nm band quantum dot laser suitable for silicon photonics. It operates stably at temperatures up to 200°C, contributing to high-density integration of optoelectronic integrated circuits. With excellent return light resistance, it eliminates the need for isolators, making it ideal for compact and low-cost devices. 【Features】 - Stable operation at up to 200°C, enabling high density with laser arrays - Excellent return light resistance (quantum dot <-130dB/Hz; quantum well <-120dB/Hz at -30dB) - High reliability in high-temperature environments (estimated lifespan > 300,000 hours at 85°C) - Customizable for wideband gain spectra according to application *For more details, please refer to the PDF document or feel free to contact us.
- Company:QDレーザ
- Price:Other