Contributes to miniaturization and cost reduction of devices without the need for an isolator! Consistent support from custom prototypes of epi-wafers to mass production.
This is a 1300 nm band quantum dot laser suitable for silicon photonics. It operates stably at temperatures up to 200°C, contributing to high-density integration of optoelectronic integrated circuits. With excellent return light resistance, it eliminates the need for isolators, making it ideal for compact and low-cost devices. 【Features】 - Stable operation at up to 200°C, enabling high density with laser arrays - Excellent return light resistance (quantum dot <-130dB/Hz; quantum well <-120dB/Hz at -30dB) - High reliability in high-temperature environments (estimated lifespan > 300,000 hours at 85°C) - Customizable for wideband gain spectra according to application *For more details, please refer to the PDF document or feel free to contact us.
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basic information
【Quantum Dot Laser】 ■Wavelength: 1240 nm - 1330 nm 【Epiwafer】 ■Wavelength: 1100 nm - 1300 nm ■Compatible with epiwafers and wafers with diffraction gratings ・Wafer for substrate bonding ・Wafer for FP/DFB lasers and gain chips ■Customizable epi structures ■Consistent support from prototyping to mass production *For more details, please refer to the PDF document or feel free to contact us.
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【Application Examples】 ■ Silicon Photonics - Communication within data centers - Supercomputers - LiDAR (FMCW, ToF) - In-vehicle communication - Mobile phone base station communication ■ Underground resource exploration (175-200℃) *For more details, please refer to the PDF document or feel free to contact us.
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Company information
QD Laser, Inc. Laser Device Division manufactures and sells high-performance semiconductor lasers and epitaxial wafers for communication and industrial use, using GaAs substrates as a platform. With unique semiconductor crystal growth technology and grating formation technology as core technologies, we have commercialized high-performance, high-quality semiconductor lasers with wavelengths ranging from 532nm to 660nm, 1064nm, and 1310nm through wafer, laser element, and module design technologies. We will continue to provide high value-added products tailored to our customers' needs.
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