It has the characteristic of small output fluctuations due to temperature, making it possible to expand into various fields! Custom manufacturing is also available.
The product is a "quantum dot laser" using a GaAs substrate. It features low output fluctuations due to temperature, making it suitable for various applications. Additionally, we accept the fabrication of compound semiconductor wafers and quantum dot wafers using MBE equipment. Custom manufacturing is also available, so please feel free to consult with us. 【Wafer Fabrication Overview】 ■ Wafer Diameter: 2 inches ■ Usable Elements: Ga, In, Al, As, Sb, Si (n-type dopant), Be (p-type dopant) ■ Structural Examples: Quantum dots with double heterostructure, etc. *For more details, please refer to the PDF document or feel free to contact us.
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【Example of Layered Structure】 ■p+-GaAs (approximately 200nm) ■p-AlGaAs (approximately 2000nm) ■(GaAs/InAs-QD)×N (300 to 500nm) ■n-AlGaAs (approximately 2000nm) ■n-GaAs (approximately 200nm) ■n-GaAs-wf *For more details, please refer to the PDF document or feel free to contact us.
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Applications/Examples of results
【Applications】 ■Quantum dot laser ■Quantum dot SOA ■Quantum well laser ■Other research and development *For more details, please refer to the PDF document or feel free to contact us.
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Company information
Our company is a specialized semiconductor manufacturer that excels in developing original integrated circuits based on the technology we have cultivated over many years, with our engineers closely communicating face to face with customers. We are by no means a large company, but we aim to be number one in market share in our entry fields. For our main products, such as OEICs, LCD drivers, and terrestrial digital demodulation ICs, we already boast a world-class market share and have become a leading company.
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