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Photodiode(pin) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
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Photodiode Product List

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Si plastic capsule photodiode

Si plastic capsule photodiode

◆Plastic encapsulated photodiode ◆High quality, high reliability ◆High-density package ◆Robust molded package

- Low dark current - Standard lead - SMT - Molded lens - Sideways available - Filter on chip (700nm cutoff) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and over 30 years of experience. We continue to create efficient manufacturing and excellent engineering solutions to meet the requirements of mass production. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying OEM photodetectors for over 30 years. Based on years of experience and efficient manufacturing know-how developed to meet the requirements of mass production, we provide products that excel in reliability and cost performance.

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GaAs PIN photodiode (PIN-PD)

GaAs PIN photodiode (PIN-PD)

GaAs PIN photodiode (TO-46 Can/ROSA compatible) optimal for VCSEL optical communication.

■Supports up to 25Gbps ■Available in SC/LC receptacle compatible ROSA or TO46-CAN package ■With ball lens or dome lens / with TIA

  • Other optical parts
  • Optical Experimental Parts

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650nm Pin Photodiode

650nm Pin Photodiode

650nm Pin Photo Diode with an active area of 3.6 mm²

This is a large-area general-purpose Si PIN photodiode with excellent high sensitivity and fast response. The active area is standard at 1.9mm x 1.9mm. The package size is compact at 5.2 x 4.8 x 1.43mm. We also consider customization to meet your specific requirements. Please feel free to contact us.

  • Other semiconductors
  • Other optical parts
  • diode

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Si photodiode 'CP0174AL'

Si photodiode 'CP0174AL'

Halogen-free compatible! Si photodiode suitable for mounting in compact optical units.

The "CP0174AL" is a photodiode capable of measuring light intensity from visible light to near-infrared light (400nm to 1000nm), including lasers and LEDs. The size of the light receiving area is 0.7mm x 0.7mm, and it is halogen-free compliant. With the adoption of a compact COB-2PIN package (2.2mm x 1.22mm), it is suitable for integration into small optical units such as pico projectors. 【Features】 ■ Sensitivity: 0.26A/W @ 405nm, 0.44A/W @ 700nm ■ Light receiving area size: 0.7mm x 0.7mm ■ Compact, thin package: 2.2mm x 1.22mm x 1.0mm COB-2PIN ■ Compatible with solder reflow ■ Lead-free compliant, RoHS compliant *For more details, please refer to the PDF document or feel free to contact us.

  • Sensors

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Nd-YAG optimized photodiode

Nd-YAG optimized photodiode

◆Nd:YAG sensitivity High voltage resistance ◆Large effective diameter ◆High-speed sensitivity ◆High precision ◆Low capacitance, low noise, and high-speed operation are possible

◆For position detection of YAG laser output light ◆Photodiode optimized for high sensitivity at 1060nm ◆Operates at a high reverse bias voltage (200 volts) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements for mass production.

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Silicon photodiode

Silicon photodiode

Silicon photodiode

The OSPD50 series is a large-area general-purpose Si PIN photodiode with excellent sensitivity and fast response. It achieves a terminal capacitance of 6pF and a cutoff frequency of over 25MHz. The active area is available in three standard sizes: 0.8mm x 0.8mm, 1.2mm x 1.2mm, and 2.0mm x 2.0mm, with a compact plastic package size of 4 x 4.8 x 1.8mm. The spectral sensitivity characteristics include three types: for visible to infrared range (λ=320nm~1100nm), for infrared range (λ=760nm~1100nm), and a special sensitivity wavelength range of λ=600nm~720nm. It is also compatible with lead-forming types that enable miniaturization of the mounting area. We offer attractive low prices and short delivery times.

  • Other semiconductors
  • Other optical parts
  • diode

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GaAs photodiode OSI optoelectronics

GaAs photodiode OSI optoelectronics

◆GaAs photodiode ◆Semiconductor optical sensor based on GaAs ◆Sensitive from 400 to 850 nm

This is a semiconductor optical sensor based on GaAs that generates photocurrent when incident light enters the active area. It generally has sensitivity from 400 to 850 nm. 【Photodiode Array】 FCI-GaAs-XXm is a GaAs PIN photodetector array designed for high-speed fiber receivers and application monitors, consisting of 4 to 12 elements. ● Specifications [Model Name: Active Area, Responsivity, Capacitance, Dark Current, Maximum Reverse Voltage, Maximum Forward Current, Bandwidth, Breakdown Voltage, Package] - FCI-GaAS-4M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-4M - FCI-GaAS-12M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-12M

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Si photodiode (TO package) (Si PD)

Si photodiode (TO package) (Si PD)

◆Driven under reverse bias conditions ◆Large diameter, square shapes also available ◆Low dark current ◆Silicon PIN photodiode ◆Peak wavelength approximately 940nm

■Spectral detection range: 400nm to 1100nm LD-PD has implemented an inspection system compliant with MIL-I-45208, and adheres to Telcordia test requirements (TA-NWT-00093) and MIL-STD-883 test methods. 【Parameters: Typical values, Symbols, Test conditions】 ● Round shape φ0.2 to φ8.0mm Detector size (mm): φ0.2, φ0.5, φ1, φ2, φ4, φ5, φ8 Response wavelength range (nm): 400 – 1100・λ Responsivity (A/W): 0.40, 0.45, 0.5, 0.5, 0.5, 0.5, 0.55・Re・VR=15V, λ=900nm Response time (nS): 2, 5, 6, 8, 15, 15, 25tr・VR=15V, RL=50Ω Dark current (nA): 1, 2, 3, 5, 12, 40, 60・ID・VR=15V Reverse voltage (V): 100・VB・IR=10μA Capacitance (pF): 0.8, 1.2, 2.0, 6, 20, 30, 70・Cj・f=1MHz, VR=15V Operating voltage (V): 0 to 15・VR Socket: Coaxial/TO-46/TO-5/TO-8 Saturation optical power: 0.3w/cm2

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[Market Report] Global Market for Photodiodes

[Market Report] Global Market for Photodiodes

The global market for photodiodes is illuminating a bright future for sensing technology, with remarkable growth anticipated.

The global photodiode market achieved approximately 410.1 million USD in sales in 2022 and is attempting to redefine sensing technology. With a vision promising enhanced data collection and precise sensing, industry experts predict that this market will reach an estimated revenue of 840.5 million USD by 2031. This projected transformation highlights an astonishing compound annual growth rate (CAGR) of 8.3% during the forecast period from 2023 to 2031. Photodiodes, the unsung heroes of optical sensing, play a crucial role in converting light into electrical signals, enabling accurate measurements across a wide range of applications, from communication systems and industrial automation to medical devices and environmental monitoring. As the world moves towards smart solutions and data-driven insights, the role of photodiodes in capturing and interpreting optical signals will become increasingly vital. For application methods, please check the [PDF download] button or apply directly through the related links.

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Semiconductor PIN photodiode

Semiconductor PIN photodiode

Optical communication photodiode

At Optotech, we are committed to designing and manufacturing custom-made semiconductors to meet the various needs that arise from the increasing functionality and complexity of sensors. Please feel free to consult us about semiconductor miniaturization, weight reduction, and high density. We handle everything from discussing the specifications of prototypes to mass production as a total system, which can lead to further cost reductions in manufacturing expenses, such as labor costs and component purchasing and management fees.

  • Other semiconductors

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EDFA with TAP-PD <Wavelength: 1410-1610nm>

EDFA with TAP-PD <Wavelength: 1410-1610nm>

Ultra-flat and wideband spectral characteristics! Built-in tap and power monitor functions.

This product is a hybrid component that combines the ultra-flat spectral sensitivity of a thin-film tap with a high-sensitivity PIN photodiode for power monitoring. It utilizes a single temperature-stable device package for both functions. It can be used for signal or pump laser source power monitoring using PM fiber pigtails. 【Features】 ■ Ultra-flat and wideband spectral characteristics ■ Built-in tap and power monitor functions ■ Corning SMF-28 or polarization-maintaining fiber *For more details, please download the PDF (English version) or feel free to contact us.

  • diode

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Technical Data: Optical Detection Device

Technical Data: Optical Detection Device

Overview of light detection elements! Free technical materials available!

A photodiode (PD) is a light-receiving element that converts changes in light intensity into electrical signals (voltage, current) when light is irradiated onto the PN junction of a semiconductor. Photodiodes are classified into three types based on their characteristics and structure: PN-PD, PIN-PD, and APD. Understanding the differences in their characteristics allows for appropriate selection based on application. 【Overview of Contents】 - What is a photodiode? - Applications of photodiodes - Structure and principle of photodiodes - Equivalent circuit - Phototransistor We are offering a free explanatory document on the overview of light detection elements (photodiodes, phototransistors, and optical power supply elements)! Please download the PDF for more details. For more information about the photodiodes we handle, please feel free to contact us.

  • diode

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