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Photodiode(pin) - List of Manufacturers, Suppliers, Companies and Products

Photodiode Product List

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Si plastic capsule photodiode

Si plastic capsule photodiode

◆Plastic encapsulated photodiode ◆High quality, high reliability ◆High-density package ◆Robust molded package

- Low dark current - Standard lead - SMT - Molded lens - Sideways available - Filter on chip (700nm cutoff) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and over 30 years of experience. We continue to create efficient manufacturing and excellent engineering solutions to meet the requirements of mass production. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying OEM photodetectors for over 30 years. Based on years of experience and efficient manufacturing know-how developed to meet the requirements of mass production, we provide products that excel in reliability and cost performance.

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GaAs PIN photodiode (PIN-PD)

GaAs PIN photodiode (PIN-PD)

GaAs PIN photodiode (TO-46 Can/ROSA compatible) optimal for VCSEL optical communication.

■Supports up to 25Gbps ■Available in SC/LC receptacle compatible ROSA or TO46-CAN package ■With ball lens or dome lens / with TIA

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Nd-YAG optimized photodiode

Nd-YAG optimized photodiode

◆Nd:YAG sensitivity High voltage resistance ◆Large effective diameter ◆High-speed sensitivity ◆High precision ◆Low capacitance, low noise, and high-speed operation are possible

◆For position detection of YAG laser output light ◆Photodiode optimized for high sensitivity at 1060nm ◆Operates at a high reverse bias voltage (200 volts) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements for mass production.

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GaAs photodiode OSI optoelectronics

GaAs photodiode OSI optoelectronics

◆GaAs photodiode ◆Semiconductor optical sensor based on GaAs ◆Sensitive from 400 to 850 nm

This is a semiconductor optical sensor based on GaAs that generates photocurrent when incident light enters the active area. It generally has sensitivity from 400 to 850 nm. 【Photodiode Array】 FCI-GaAs-XXm is a GaAs PIN photodetector array designed for high-speed fiber receivers and application monitors, consisting of 4 to 12 elements. ● Specifications [Model Name: Active Area, Responsivity, Capacitance, Dark Current, Maximum Reverse Voltage, Maximum Forward Current, Bandwidth, Breakdown Voltage, Package] - FCI-GaAS-4M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-4M - FCI-GaAS-12M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-12M

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Si photodiode (TO package) (Si PD)

Si photodiode (TO package) (Si PD)

◆Driven under reverse bias conditions ◆Large diameter, square shapes also available ◆Low dark current ◆Silicon PIN photodiode ◆Peak wavelength approximately 940nm

■Spectral detection range: 400nm to 1100nm LD-PD has implemented an inspection system compliant with MIL-I-45208, and adheres to Telcordia test requirements (TA-NWT-00093) and MIL-STD-883 test methods. 【Parameters: Typical values, Symbols, Test conditions】 ● Round shape φ0.2 to φ8.0mm Detector size (mm): φ0.2, φ0.5, φ1, φ2, φ4, φ5, φ8 Response wavelength range (nm): 400 – 1100・λ Responsivity (A/W): 0.40, 0.45, 0.5, 0.5, 0.5, 0.5, 0.55・Re・VR=15V, λ=900nm Response time (nS): 2, 5, 6, 8, 15, 15, 25tr・VR=15V, RL=50Ω Dark current (nA): 1, 2, 3, 5, 12, 40, 60・ID・VR=15V Reverse voltage (V): 100・VB・IR=10μA Capacitance (pF): 0.8, 1.2, 2.0, 6, 20, 30, 70・Cj・f=1MHz, VR=15V Operating voltage (V): 0 to 15・VR Socket: Coaxial/TO-46/TO-5/TO-8 Saturation optical power: 0.3w/cm2

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