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Photodiode(si) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Sep 17, 2025～Oct 14, 2025
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Photodiode Product List

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Ultraviolet + Visible Light Wavelength Photodiode

Ultraviolet + Visible Light Wavelength Photodiode

◆Package with quartz or ultraviolet-transmitting glass window ◆Increased performance at high speeds due to low dark current and low capacitance with reverse bias

◆Wavelength sensitivity ranges from 200nm to 1100nm Packaged with quartz or ultraviolet transmitting glass windows, these detectors have a wavelength sensitivity from 200nm to 1100nm. They can enhance performance at high speeds due to low dark current and low capacitance with reverse bias. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements of mass production.

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SPO2 (arterial blood oxygen saturation) to photodiode (PD)

SPO2 (arterial blood oxygen saturation) to photodiode (PD)

■Wide active area ■High sensitivity ■Strong durability ■Wide angle ■Chip on PCB

◆Medical Sensors◆Various Optical Sensors◆Four Selectable Patterns This is a photodiode for receiving light to measure SPO2 (arterial blood oxygen saturation). These photodiodes are incorporated into and used in smartphones, smartwatches, and medical devices. SJ SYSTEM is a specialized manufacturer of technology for measuring SPO2 (arterial blood oxygen saturation) with pulse oximeters, and it manufactures and sells LED modules, PD modules, and reflection modules for SPO2. These products are used in the healthcare field and are utilized in smartphones and smartwatches.

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InGaAs high-speed photodiode

InGaAs high-speed photodiode

◆High-speed 70μm InGaAs photodetector◆Combining a sealed TIA and detector in a TO-46 package

The FCI-H155/622M-InGaAs-70 series is a high-speed 70μm InGaAs photodetector equipped with a wide-range transimpedance amplifier. By combining a sealed TIA and detector in a 4-pin TO-46 package, it provides ideal conditions for high-speed signal detection and amplification. 【Model Name: Active Area (Diameter)・Responsivity 1310nm・Responsivity 1550nm・Dark Current・Capacitance・Rise Time・Reverse Voltage】 ●FCI-InGaAs-70: 70 μm・0.9 A/W・0.95 A/W・0.03 nA, Vr=5.0V・1.5 pF, Vr=5.0V・0.2 ns, Vr=5.0V・20 V, max ●FCI-InGaAs-120: 120 μm・0.9 A/W・0.95 A/W・0.05 nA, Vr=5.0V・2 pF, Vr=5.0V・0.3 ns, Vr=5.0V・20 V, max ●FCI-InGaAs-300: 300 μm・0.9 A/W・0.95 A/W・0.3 nA, Vr=5.0V・10 pF, Vr=5.0V・1.5 ns, Vr=5.0V・15 V, max

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GaAs PIN photodiode (PIN-PD)

GaAs PIN photodiode (PIN-PD)

GaAs PIN photodiode (TO-46 Can/ROSA compatible) optimal for VCSEL optical communication.

■Supports up to 25Gbps ■Available in SC/LC receptacle compatible ROSA or TO46-CAN package ■With ball lens or dome lens / with TIA

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Pin photodiode chip / chip-on-submount type

Pin photodiode chip / chip-on-submount type

Wavelength is 1300 to 1600 nm! Usable for measurement instruments, data communications, FTTH, and other applications.

This product is a photodiode that uses InGaAs material grown on an InP substrate by MOCVD (Metal Organic Vapor Deposition). It is a front-illuminated type that supports a wide operating wavelength range from 1300nm to 1600nm and can be easily mounted on a submount. Please feel free to contact us when you need assistance. 【Features】 ■ InGaAs material ■ Planar Zn diffusion structure ■ Light receiving area with a diameter of 70μm ■ Front-illuminated photodiode ■ High responsiveness (0.85 A/W over a wide range (1300nm to 1600nm)) *For more details, please download the PDF (English version) or feel free to contact us.

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Black silicon photodiode

Black silicon photodiode

A photodiode with very high sensitivity over a wide wavelength range from 200nm to 950nm.

ElFys' black silicon photodiode is a photodiode that enhances light collection through surface nanostructure technology combined with atomic layer deposition (ALD) coating, allowing for high sensitivity in detecting light over a wide wavelength range. It has an external quantum efficiency of over 96% in the wavelength range of 200nm to 950nm. Particularly in the ultraviolet (UV) region, it exhibits very high sensitivity, with approximately twice the optical responsiveness compared to conventional pn junction photodiodes.

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Black Silicon Photodiode ElFys SM

Black Silicon Photodiode ElFys SM

Ultra-high sensitivity SMD package suitable for wearable devices - Black silicon photodiode

The ElFys SM series is a black silicon photodiode in an SMD package that excels in visible and near-infrared light detection performance. ■ Ultra High Sensitivity With ultra high sensitivity, it outputs more photocurrent, improving the energy efficiency of PPG (photoplethysmography) modules. ■ SMD Compact Package The "compact package" and "high light-receiving area fill factor" enable the design of innovative wearable products. It is particularly suitable for health monitoring applications in wearable devices.

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Technical Data: Optical Detection Device

Technical Data: Optical Detection Device

Overview of light detection elements! Free technical materials available!

A photodiode (PD) is a light-receiving element that converts changes in light intensity into electrical signals (voltage, current) when light is irradiated onto the PN junction of a semiconductor. Photodiodes are classified into three types based on their characteristics and structure: PN-PD, PIN-PD, and APD. Understanding the differences in their characteristics allows for appropriate selection based on application. 【Overview of Contents】 - What is a photodiode? - Applications of photodiodes - Structure and principle of photodiodes - Equivalent circuit - Phototransistor We are offering a free explanatory document on the overview of light detection elements (photodiodes, phototransistors, and optical power supply elements)! Please download the PDF for more details. For more information about the photodiodes we handle, please feel free to contact us.

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GaAs photodiode OSI optoelectronics

GaAs photodiode OSI optoelectronics

◆GaAs photodiode ◆Semiconductor optical sensor based on GaAs ◆Sensitive from 400 to 850 nm

This is a semiconductor optical sensor based on GaAs that generates photocurrent when incident light enters the active area. It generally has sensitivity from 400 to 850 nm. 【Photodiode Array】 FCI-GaAs-XXm is a GaAs PIN photodetector array designed for high-speed fiber receivers and application monitors, consisting of 4 to 12 elements. ● Specifications [Model Name: Active Area, Responsivity, Capacitance, Dark Current, Maximum Reverse Voltage, Maximum Forward Current, Bandwidth, Breakdown Voltage, Package] - FCI-GaAS-4M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-4M - FCI-GaAS-12M: 70um, 0.63 A/W, 850nm, 0.65 pF, 0.03 nA, 20 V max, 5 mA, 2 GHz, 850 nm, 50 V, FCI-GaAS-12M

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[Market Report] Global Market for Photodiodes

[Market Report] Global Market for Photodiodes

The global market for photodiodes is illuminating a bright future for sensing technology, with remarkable growth anticipated.

The global photodiode market achieved approximately 410.1 million USD in sales in 2022 and is attempting to redefine sensing technology. With a vision promising enhanced data collection and precise sensing, industry experts predict that this market will reach an estimated revenue of 840.5 million USD by 2031. This projected transformation highlights an astonishing compound annual growth rate (CAGR) of 8.3% during the forecast period from 2023 to 2031. Photodiodes, the unsung heroes of optical sensing, play a crucial role in converting light into electrical signals, enabling accurate measurements across a wide range of applications, from communication systems and industrial automation to medical devices and environmental monitoring. As the world moves towards smart solutions and data-driven insights, the role of photodiodes in capturing and interpreting optical signals will become increasingly vital. For application methods, please check the [PDF download] button or apply directly through the related links.

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