SiC MOSFET FMG50AQ120N6
1200V rated SiC MOSFET discrete products that achieve high reliability and low loss.
- Insulation-type package with heat dissipation capability (Rth(j-c)=0.22℃・w Typ) - Adopts a 4-pin structure to reduce the influence of source terminal inductance, achieving faster switching and lower loss - Industry-leading low on-resistance (15mΩ Typ Tj=150℃)
- Company:旭テック 大阪本社/東京支店/名古屋営業所
- Price:Other