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analysis(fem) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Sep 03, 2025～Sep 30, 2025
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analysis Product List

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[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

Evaluate the shape of the active layer and the dopant.

We will introduce a case study evaluating the distribution of the diffusion layer in commercially available SiC power MOSFET devices. In the SiC MOSFET manufacturing process, the channel is formed through ion implantation, activation heat treatment, and epitaxial layer formation. During the active layer formation process, we understood the device structure through TEM observation and evaluated the diffusion layer distribution of the p-type/n-type cross-section and the epitaxial layer from SCM measurements, as well as the depth concentration distribution of dopant elements (N, Al, P) from SIMS measurements. Measurement methods: SIMS, SCM, TEM Product field: Power devices Analysis purpose: Trace concentration evaluation, shape evaluation, product investigation For more details, please download the materials or contact us.

  • Contract Analysis

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Kenic system's LCD controller

Kenic system's LCD controller

"Easy and Useful" is our policy.

【Features】 ・Externally, it seems like a dedicated IC. ・therefore, it can quickly support the discontinuance of the LCD or specificaitons change. ・The image frame buffer appears to be SRAM from Host-CPU, therefore software disign is easy. ・「Direct connection to the Host-CPU with 8bit」and there is a complete, one-to-one correlation between the mapping coordinates of the pixels and addresses as seen from the Customer’s CPU. ・Power supply is a 3.3V single power supply.

  • controller

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[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFETs

[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFETs

Identification of the interface between contact electrodes and SiC layer, and evaluation of elemental distribution.

We will introduce an analysis case of commercially available SiC power MOSFET devices. In SiC materials, it is essential to control the materials in a system that includes not only Si but also C, which differs from the conventional manufacturing methods of Si semiconductors. In the process of forming ohmic junctions between the contact electrodes and the SiC layer, we evaluated the elemental distribution and crystal phases, including C, using EDX/EELS analysis with TEM and electron diffraction.

  • Contract Analysis

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Analysis Service | JTL

Analysis Service | JTL

We support consistent evaluation from the identification of analysis areas to sample preparation, observation, and analysis, regardless of organic or inorganic materials.

We provide comprehensive support from advanced sample preparation using precision grinding, ion milling, and FIB, to observation and analysis using SEM and EPMA. Additionally, we can perform non-destructive internal structure observation using SAT and X-ray CT. In chemical analysis, we conduct various analyses of target components using FT-IR, ICP, GC, and HPLC.

  • Public Testing/Laboratory
  • Contract measurement
  • Other services

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[SIM] Scanning Ion Microscopy Method

[SIM] Scanning Ion Microscopy Method

Observation of SIM images is possible with high resolution (accelerating voltage 30kV: 4nm).

- SIM imaging observation is possible with high resolution (accelerating voltage 30kV: 4nm). - Compared to SEM images, SIM images provide information about the extreme surface layer. - Observation of metal crystal grains is possible (e.g., Al, Cu). - The resolution is inferior to SEM images (SIM: 4nm, SEM: 0.5nm). ■Features of MST-owned equipment - Compatible with JEIDA standard wafers with a maximum sample size of 300mm in diameter. - Continuous cross-sectional SIM imaging acquisition is possible in combination with FIB (Focused Ion Beam) processing (Slice & View).

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  • Contract Analysis
  • Contract measurement
  • Contract Inspection

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FE-SEM/EDS-Raman analysis

FE-SEM/EDS-Raman analysis

A new proposal that is the first in the industry! A Raman detector has been added to the FE-SEM!

Traditionally, elemental analysis using an EDS detector during FE-SEM observation was common. Our company has transformed the conventional EDS detector into a windowless EDS, allowing for high-sensitivity analysis from Li to U. Additionally, with the inclusion of a Raman detector, it has become possible to obtain information on different compound forms from organic to inorganic.

  • Other inspection equipment and devices

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