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Magneto-optical materials with excellent optical and microwave properties, used in optical isolators, magnetic resonance filters, etc. High-purity YIG single crystals produced by the FZ method. Special doping can be accommodated according to applications and required characteristics.
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Synthetic quartz tube Synthetic quartz rod Synthetic quartz ingot Quartz substrate for photomasks Quartz wafer
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CVD diamond substrates (Chemical Vapor Deposition diamond substrates) are materials that use thin films of diamond produced by the chemical vapor deposition (CVD) method as a substrate. In the CVD method, diamond is grown on the substrate using a gaseous carbon source (usually methane) through a chemical reaction. This process allows for the creation of high-quality diamond thin films.
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Aluminum nitride (AlN) single crystal substrates are next-generation electronic materials with high thermal conductivity, excellent electrical insulation, low dielectric loss, and heat resistance. They are particularly suitable for applications such as power electronics, high-frequency devices, UV-LEDs, deep ultraviolet (DUV) light sources, and semiconductor packaging.
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LiTaO3 (lithium tantalate) is an artificial single crystal material widely used in optics, electronics, and acoustics. In particular, it is noted for its excellent nonlinear optical properties and piezoelectric characteristics, making it a foundational material for various advanced technologies. While it possesses physical properties similar to lithium niobate (LiNbO₃), it demonstrates superior thermal and mechanical stability, making it suitable as an alternative material for applications that require more demanding environments and high precision.
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LiNbO3 (lithium niobate) is a multifunctional artificial single crystal material widely used in the fields of optics, electronics, and acoustics. Its distinctive nonlinear optical properties, piezoelectric properties, electro-optic properties, and ferroelectricity make it highly valued as a foundational material for next-generation optical communication technologies and high-performance devices.
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SiCOI (Silicon Carbide On Insulator) is an advanced semiconductor substrate that forms a single crystal thin film of silicon carbide (SiC) on an insulating layer (mainly SiO₂). It is a structure that applies SOI (Silicon On Insulator) technology to SiC and is gaining attention as a material for next-generation power devices and high-frequency devices.
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We use 99.999% high-purity single crystal Al2O3 and optical-grade sapphire materials. Our company is capable of producing Epi-ready sapphire wafers with very low surface roughness. We can provide sapphire windows with good transmittance and excellent optical performance. We also offer patterned sapphire substrates and sapphire ingots.
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We manufacture single crystal ingots that serve as the material for silicon wafers using a production method called the CZ method (Czochralski method). These ingots are primarily used in the etching process, which is one of the device manufacturing processes, and are extremely important consumable materials. Our company can provide various sizes and resistivity silicon ingot products according to our customers' requirements.
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The development and advancement of diamond tools in the machining industry have enabled AlSiC housings to be machined into various complex shapes. AlSiC housings are used as excellent packaging materials for heat retention due to their superior thermodynamic and mechanical properties, lightweight nature, and excellent airtightness.
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AlSiC substrates are widely used in equipment equipped with high-power IGBT modules due to their excellent thermodynamic and mechanical properties.
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Bilateral cooling technology is a new structural technology for power module products in recent years, effectively reducing the parasitic inductance and parasitic resistance of devices, thereby significantly improving the power density and reliability of the devices. This product serves as an essential primary material for bilateral cooling devices, mainly playing roles in "thermal conduction," "electrical conduction," and "support."
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Light Emitting Diodes (LEDs) have been manufactured from gallium nitride (GaN), leading to the recognition of high-performance white solid-state lighting.
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Gallium nitride (GaN) is a very hard and mechanically stable wide-bandgap semiconductor. Due to its higher breakdown voltage, faster switching speed, higher thermal conductivity, and lower on-resistance, GaN-based power devices are significantly superior to silicon-based devices.
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High quality (few crystal defects) is attracting attention for power LSI, high-brightness LEDs, and high-performance lasers.
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We supply high-quality single crystal and polycrystalline silicon ingots, as well as cutting-edge processed parts for semiconductor manufacturing equipment.
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Polysilicon is a collection of silicon crystals.
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Spinel, coesite
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A dummy wafer, also known as a test wafer, is a type of wafer that is used primarily for experiments and inspections of equipment, unlike product wafers. It is widely used for operational tests of manufacturing equipment, transport tests, and mechanical evaluations (such as cutting, grinding, polishing, etc.).
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Special processed products We provide products with various shapes and surface treatments tailored to customer requests, such as high-purity material parts for various manufacturing devices.
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Special processed products We provide products with various shapes and surface treatments tailored to customer requirements, such as high-purity material parts for various manufacturing devices.
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Special processed products We provide products with various shapes and surface treatments tailored to customer requirements, such as high-purity material parts for various manufacturing devices.
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Product Description We manufacture single crystal ingots that serve as the material for silicon wafers using a production method called the CZ method (Czochralski method). These ingots are primarily used in the etching process, which is one of the device manufacturing processes, and are extremely important consumable materials. Our company can provide various sizes and resistivity silicon ingot products according to customer requirements.
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Silicon wafers are high-purity wafers made of silicon. Silicon wafers are produced by cutting silicon ingots to a thickness of about 1 mm. Silicon wafers are most commonly used in the manufacturing of integrated circuits (ICs or LSIs). By introducing impurities that act as acceptors or donors, forming insulating films, and creating wiring on this wafer, semiconductor devices can be formed.
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Single crystal SiC ingots produced by the sublimation method undergo high-precision processing (wafering), high-precision cleaning, and final inspection to become single crystal SiC wafers.
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SiC (silicon carbide) is a compound semiconductor composed of silicon (Si) and carbon (C). SiC is a type of ceramic and has been widely used in applications such as abrasives due to its excellent mechanical properties, chemical stability, and heat resistance. However, in recent years, advancements in crystal growth technology have allowed SiC to efficiently exchange power compared to traditional semiconductors like silicon, while also generating less heat. As a result, the demand for SiC as an alternative power semiconductor material has rapidly increased. Additionally, since SiC can exist in various crystal forms such as hexagonal and cubic, there are many types of SiC wafers that are used according to specific applications.
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