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  2. Electronic Components and Semiconductors
  3. モリ電子工業
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Electronic Components and Semiconductors
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モリ電子工業

EstablishmentAugust 1966
capital9500Ten thousand
number of employees50
addressOsaka/Yodogawa-ku, Osaka-shi/7-3-11 Nishinakajima
phone06-4806-1177
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last updated:Oct 07, 2026
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モリ電子工業 Product Lineup

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Electronic components and semiconductors Electronic components and semiconductors
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Electronic

Electronic components and semiconductors

Electronic components and semiconductors

SiC MOSFET『FMG50AQ120N6』

Achieves low RDS(on) to maximize the effective use of package space.

The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

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Diode module "DCA200/240DB"

For applications such as generators and elevators! The synergy with solder bonding on both sides of the chip improves long-term reliability.

The "DCA 200/240DB" is a high heat dissipation, high reliability model of diode module. By improving heat dissipation through a newly designed low-layer structure and significantly reducing thermal stress on the chip, it achieves approximately twice the power cycle endurance compared to our conventional products. This contributes to the enhancement of device reliability. Additionally, we offer the "DCA200DB220," which uses a specially designed glass passivation type high voltage chip, and the "DCA240EB," which incorporates high heat dissipation special materials in the internal insulation layer. 【Features】 ■ Achieves high heat dissipation (low thermal resistance) through a low-layer structure ■ Realizes a 20% reduction in weight through optimization of internal design and materials (compared to our conventional products), contributing to the lightweighting of devices ■ All models use environmentally friendly completely lead-free solder *For more details, please download the PDF or feel free to contact us.

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Module "SCA160/200DB・SCE160/200DB"

The adoption of a unique gate structure chip achieves high tolerance against lightning surges and other disturbances!

The "SCA160/200DB・SCE160/200DB" is a thyristor diode module that uses completely lead-free solder. By adopting a low-layer structure, it significantly reduces thermal stress on the chip, achieving high power cycle endurance. Through optimization of internal design and materials, it has been made 10% lighter compared to our conventional products. Please feel free to contact us if you need any assistance. 【Features】 ■ High heat dissipation achieved through the adoption of a low-layer structure (improved reliability) ■ High di/dt endurance ■ Lightweight ■ Environmentally friendly *For more details, please download the PDF or feel free to contact us.

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SiC MOSFET module "TechnoBlock Series"

Introducing our unique package and DioMOS technology fusion module!

The "Techno Block Series" is a semiconductor module featuring our unique double-sided solder bonding and transfer molding, designed as a compact, high-heat-dissipation package. It incorporates a built-in forward diode (FWD) function, characterized by space-saving design and low variation in on-resistance. It is well-suited for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us for inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

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IGBT module "GSA75AA120"

Insulation withstand voltage 2500V! A module that uses IGBTs specialized for high-speed performance.

The "GSA75AA120" is an IGBT module compliant with UL standards. It comes in a compact, highly reliable SOT-227 standard package. It features an IGBT specialized for high-speed performance, along with a high-speed diode designed to match the IGBT. Additionally, it can be directly mounted to a heat sink. Please feel free to contact us if you have any inquiries. 【Features】 ■ Excellent high-speed performance (40kHz to 70kHz) ■ Compact and highly reliable package *For more details, please download the PDF or feel free to contact us.

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IGBT module "GSA100AA60"

Compact, high-reliability SOT-227 standard package! Direct mounting to heat sinks is possible.

We would like to introduce our IGBT module, 'GSA100AA60'. By adopting our proprietary dedicated IGBT chip, we have achieved a low Vce(sat) of 1.21V Typ at 125℃. It is well-suited for applications such as bypass AC switches in uninterruptible power supplies (UPS) and pulse power supplies for surface treatment. Please feel free to contact us when you need assistance. 【Features】 ■ Pursuit of low loss in low switching frequency range ■ Compact and highly reliable package *For more details, please download the PDF or feel free to contact us.

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Full Bridge SiC-MOSFET Power Module

Adopted by major domestic customers in FA, industrial machinery, and robot devices!

We offer the industrial equipment application "Totem Pole Bridgeless PFC / Full Bridge SiC-MOSFET Power Module." To meet various customer needs, we provide a range of products including industry-leading bridge diodes, a diverse array of diodes, a wide range of power MOSFETs from low to high voltage, high-voltage power ICs, and power circuit components consolidated into power modules. Please feel free to contact us when you need assistance. 【Features】 - Miniaturization (30% reduction in mounting area) - 25% reduction in surge voltage (unique low inductance structure) - Insulated type - Equipped with four 650V/20-50mΩ SiC-MOSFETs - Samples available *For more details, please download the PDF or feel free to contact us.

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Ultra-Low VF Bridge Diode "LM Series"

Achieving world-class ultra-low VF! We would like to introduce our featured products.

We handle the ultra-low VF bridge diode "LM Series." Achieving world-class ultra-low VF, it has a high surge capacity (IFSM) and is rated at 600V/25A. Please feel free to contact us when you need assistance. 【Features】 ■ Achieves ultra-low VF ■ High surge capacity (IFSM) ■ 600V/25A ■ In mass production *For more details, please download the PDF or feel free to contact us.

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5th Generation FRD "Z Series" for PFC

Ultra-fast FRD, reducing recovery current by 40%! Low noise (reduction of noise countermeasure components)

We handle the 5th generation FRD 'Z series' for PFC. It is a super-fast FRD that reduces recovery current by 40%. The product features low noise (reduction of noise countermeasure components). We also have samples available. Please feel free to contact us when you need them. 【Features】 ■ Super-fast FRD ■ 40% reduction in recovery current ■ Low noise (reduction of noise countermeasure components) ■ 650V/10A, 20A ■ Samples available *For more details, please download the PDF or feel free to contact us.

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Application for industrial equipment: "SiC Schottky Barrier Diode"

New SiC-SBD (low VF), compact surface mount package! AEC-Q101 compliant (planned).

We handle the industrial equipment application "SiC Schottky Barrier Diode." The new SiC-SBD (low VF) comes in a compact surface-mount package and is expected to comply with AEC-Q101. Samples are also available. Please feel free to contact us when you need them. 【Features】 ■ New SiC-SBD (low VF) ■ Compact surface-mount package ■ Expected to comply with AEC-Q101 ■ 650V/5A, 10A ■ Samples available *For more details, please download the PDF or feel free to contact us.

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Application for Industrial Equipment: "SiC MOSFET"

Achieving the world's highest level of low loss! Samples are also available.

We handle the industrial equipment application "SiC MOSFET." Achieving world-class low loss. It is a product with ultra-high voltage resistance. We also have samples available. Please feel free to contact us when you need assistance. 【Features】 ■ Achieves world-class low loss ■ Ultra-high voltage resistance ■ High-speed switching ■ 650V/15mΩ, 60mΩ ■ Samples available *For more details, please download the PDF or feel free to contact us.

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Sansa Electric Manufacturing Co., Ltd. SiC POWER MOSFET

FMG50AQ170N6

The "SiC MOSFET (TO-247-4L)" manufactured by SanSha Electric Co., Ltd. is an industrial power semiconductor that incorporates a built-in freewheeling diode (FWD) function. It supports high current density. By reducing wiring resistance and achieving a strong bond through a unique terminal structure, it harnesses the performance of SiC chips that reach over four times the current density compared to conventional products. Additionally, it maximizes the effective use of package space, resulting in low RDS(on). 【Features】 ■ Suitable package that achieves an insulated structure and high heat dissipation ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

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2E Rotary Solenoid

Introducing small coil data with a return spring torque of 0.0055 to 0.009 N·m!

We would like to introduce the "2E Rotary Solenoid" that we handle. The total weight (X3, 4, 8, 9) is approximately 56g, and the 1/2 rotation angle is ±3 degrees. The standard heat dissipation plate is made of 90×90×3mm aluminum. In addition, we also offer various rotary solenoids such as the "5S Rotary Solenoid" and "8L Rotary Solenoid." 【Features】 ■ 1/2 rotation angle (±3 degrees) ■ Total weight (X3, 4, 8, 9): approximately 56g ■ Standard heat dissipation plate: 90×90×3mm aluminum ■ Return spring torque: 0.0055–0.009N·m *For more details, please download the PDF or feel free to contact us.

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