Antenna Technology Inc. List of News Articles

In the evaluation of GaN HEMTs, DC measurements alone cannot capture the true behavior of the device in actual operation. Phenomena such as current collapse caused by self-heating and trap effects can lead to RF output degradation and reliability deterioration. In this free online seminar, top researchers from the United States will present the latest evaluation workflow that integrates pulse IV measurements, RF characteristic evaluation, and thermal reflection imaging. The seminar will be conducted in English without interpretation, so please join us. 【Main Program】 Analysis of correlation data for pulse IV/RF/thermal reflection imaging of GaN devices Thermal degradation mechanisms of GaN, SiC, etc., and their impact on reliability Exceeding the limits of IR (infrared) with picosecond resolution thermal reflection imaging Automated wafer-level evaluation system for RF/silicon photonics 【Event Overview】 Date and Time: May 27, 2026, 7:00 AM or 7:00 PM (PDT) *Japan Time: May 27 (Wed) 11:00 PM or May 28 (Thu) 7:00 AM Participation Fee: Free (online streaming with live Q&A) This seminar is packed with tips for next-generation device development. Please register!