- Publication year : 2026
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ON Semiconductor (onsemi) announced that it has secured a new design win with Sineng Electric. In this design win, onsemi's latest generation hybrid power integrated module (PIM) will be adopted for two utility-scale renewable energy platforms. This PIM features onsemi's FS7 insulated gate bipolar transistor (IGBT) and EliteSiC technology, and will be used in Sineng's next-generation 430 kW liquid-cooled energy storage system (ESS) and 320 kW utility-scale solar string inverter. By adopting onsemi's technology, these Sineng solutions will achieve improved efficiency, higher power density, reduced switching losses, and enhanced thermal performance, further raising the performance standards for utility-scale renewable energy applications. In benchmark tests against competing power modules, onsemi's FS7-based hybrid PIM achieved a 0.07% efficiency improvement in the 320 kW solar inverter configuration, reducing losses by 225 W.
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ON Semiconductor will expand its leadership in the intelligent power sector by starting the development and manufacturing of next-generation gallium nitride (GaN) power devices at 650V through a new collaboration agreement with GlobalFoundries (GF). ON Semiconductor's products will combine GF's 200mm eMode GaN-on-silicon process with ON Semiconductor's industry-leading silicon drivers, controllers, and enhanced thermal performance packages, providing smaller and more efficient systems optimized for applications in AI data centers, automotive, industrial, aerospace, defense, and security.
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