エナテック List of Products and Services

【Products Offered】 * We handle various semiconductor wafers such as CZ, FZ, diffusion wafers, SiC, SOI, EPI, GaAs, SiGe, GaSb, sapphire, germanium, and more. * Prime test monitor bare wafers (high precision wafers, particle check products, COP countermeasures, etc.) * SOI wafers: High-resistance device layers, substrates can also be accommodated, and it is possible to process supplied wafers into SOI wafers. * We also handle non-particle-controlled dummy wafers (coin rolls). * Various processing services: film formation, grinding (possible below 30μm), dicing, edge chamfering, size reduction, patterning, silicon and compound semiconductor wafer reclamation, re-cleaning, measurement and analysis services, etc. We also handle various processed products of single crystal/multicrystal silicon and synthetic quartz. Please inquire about compound semiconductors and various electronic materials, wafer cases, trays, dicing tapes, and other peripheral products. We will search for products that meet specifications from both domestic and international sources. We can also process wafers purchased from other companies and deliver them.

Enatec Co., Ltd.'s CZ wafer film deposition processing can accommodate film deposition on wafers ranging from 2 inches to 450 mm, depending on the type of film. Oxide films: thermal oxidation, RTO, LP-TEOS, HDP-USG, P-TEOS, PSG, BPSG, BSG, LP-CVD, PE-CVD Nitride films: HCD-SiN, DCS-SiN, P-SiN, LP-SiN, LP-CVD, PE-CVD Metal films: TaN, Ta, Cu, Al, AlN, Al-Si, Al-Si-Cu, Ni, W, W-Si-Cu Others: Poly-Si, a-Si, SiC, Low-k (SiOC-based, organic chemistry-based), graphene films, graphite * Depending on the type of film, such as SiO2, SiN, SiON, we can accommodate from one piece. * We can also handle Ti, Cu, Cr, Ni, etc., through sputter deposition. * Resist coating/exposure/etching can be accommodated from 4 inches to 12 inches. * We can also provide consistent support for wafers with test patterns (from 6 inches to 12 inches) based on specifications. * We accept exposure/etching with provided reticles (8 inches and 12 inches). For more details, please contact us.

"Epi-Wafer" 1. It is used for discrete devices and IC power devices. * Diameter: 100-200 mm * Epi layer dopants: Boron, Phosphorous * Epi layer resistance value: 0.01-500 Ω/cm * Epi thickness: 1-150 um * Stacking fault: Below 10 /cm2 * Thickness Uniformity: 1% * Resistivity Uniformity: 2.5% (resistance 0.1-20 Ohm.cm) / 3% (resistance >20 Ohm.cm) * Minimum of 25 pieces "Epi Contract Processing" We can also accommodate wafers with high Epi resistance exceeding 1000 ohm cm, or wafers with thick Epi layers. Multi-layer Epi deposition can also be supported depending on specifications. Features - Small lots (from a few pieces to 25 pieces) are possible for experimental use - Sub-wafers can be specified (customers can also provide sub-wafers) - Epi thickness tolerance: within 6-10% (varies with Epi thickness) - Resistance uniformity tolerance: within 5-15% (varies with resistance)

Our company handles monitor wafers and dummy wafers for semiconductor manufacturing equipment testing, as well as monocrystalline silicon wafers for solar cells, polycrystalline wafers for solar cells, SOI wafers, diffusion wafers, and more. We will introduce suitable wafers according to your application. CZ wafers are available in diameters ranging from less than 1 inch to 450 mm. We can also perform EPI film deposition on wafers you have or process them into SOI wafers. In addition to CZ wafers, we also offer high-resistivity FZ wafers from less than 4 inches to 8 inches, with resistance values ranging from a few ohms to over 10,000 ohms. We also handle sapphire, germanium, compound semiconductors, and polycrystalline silicon. Please contact us for more details.