エナテック Product Lineup

Enatec Co., Ltd.'s CZ wafer film deposition processing can accommodate film deposition on wafers ranging from 2 inches to 450 mm, depending on the type of film. Oxide films: thermal oxidation, RTO, LP-TEOS, HDP-USG, P-TEOS, PSG, BPSG, BSG, LP-CVD, PE-CVD Nitride films: HCD-SiN, DCS-SiN, P-SiN, LP-SiN, LP-CVD, PE-CVD Metal films: TaN, Ta, Cu, Al, AlN, Al-Si, Al-Si-Cu, Ni, W, W-Si-Cu Others: Poly-Si, a-Si, SiC, Low-k (SiOC-based, organic chemistry-based), graphene films, graphite * Depending on the type of film, such as SiO2, SiN, SiON, we can accommodate from one piece. * We can also handle Ti, Cu, Cr, Ni, etc., through sputter deposition. * Resist coating/exposure/etching can be accommodated from 4 inches to 12 inches. * We can also provide consistent support for wafers with test patterns (from 6 inches to 12 inches) based on specifications. * We accept exposure/etching with provided reticles (8 inches and 12 inches). For more details, please contact us.

"Epi-Wafer" 1. It is used for discrete devices and IC power devices. * Diameter: 100-200 mm * Epi layer dopants: Boron, Phosphorous * Epi layer resistance value: 0.01-500 Ω/cm * Epi thickness: 1-150 um * Stacking fault: Below 10 /cm2 * Thickness Uniformity: 1% * Resistivity Uniformity: 2.5% (resistance 0.1-20 Ohm.cm) / 3% (resistance >20 Ohm.cm) * Minimum of 25 pieces "Epi Contract Processing" We can also accommodate wafers with high Epi resistance exceeding 1000 ohm cm, or wafers with thick Epi layers. Multi-layer Epi deposition can also be supported depending on specifications. Features - Small lots (from a few pieces to 25 pieces) are possible for experimental use - Sub-wafers can be specified (customers can also provide sub-wafers) - Epi thickness tolerance: within 6-10% (varies with Epi thickness) - Resistance uniformity tolerance: within 5-15% (varies with resistance)