エナテック Product Lineup

The diameter ranges from approximately 30 mm to 8 inches, featuring high lifetime, low oxygen, and low carbon, with the capability to accommodate ultra-high resistance wafers exceeding 10,000 Ω. FZ wafers for sensors are used in particle inspection machines and IR inspection machines, while FZ wafers for high-power devices are used in thyristors and IGBTs, and FZ wafers for medium voltage are utilized in IGBTs and diodes. *Prime Grade FZ ingots (available for immediate delivery) A Certificate of Conformance (CofC) with actual measurement values will be provided upon delivery. Processing into wafers is also possible. Specifications: Finish: as ground Orientation: (1-1-1) ± 2 deg. Diameter (mm): 101.60 ± 0.20 Ingot length (mm): 200 - 400 First OF (mm): 30.5 - 34.5 (1-10) +/- 1 Deg. Second OF (mm): N.A. Type: N-type Lifetime (microsec): 1000 Resistance value (ohm cm) at 25°C: 2032 ± 700.00 RRV [%]: N.A. *Multiple pieces are in stock.

NTD silicon (neutron-irradiated silicon) excels in the uniformity of resistivity in the plane and is used as a power thyristor (silicon-controlled rectifier), widely utilized in semiconductor power devices across various industries from general industry to home appliances. Currently, FZ silicon is widely used not only in existing ICs such as memory and DSPs due to its low level of contaminants but also in the fields of MEMS and optoelectronic sensors. For more details, please contact us.

Gas-doped FZ silicon is FZ silicon that has been doped with impurities by pulling a single crystal in a dopant gas. Our company can provide high-quality, high-purity FZ silicon. Currently, due to its low level of contaminants, FZ silicon is widely used not only in existing memory and DSP ICs but also in the fields of MEMS and optoelectronic sensors. Please contact us for more details. ★Prime Grade FZ ingot (available for immediate delivery) A manufacturer's Certificate of Compliance (CofC) will be provided upon delivery. Specifications: Orientation: (1-1-1) ± 2 deg. Diameter (mm): 101.60 ± 0.20 Length (mm): 200 - 400 First Orientation Flat (mm): 30.5 - 34.5 (1-10) +/- 1 Deg. Second Orientation Flat (mm): N.A. Type: N-type/Phosphorus Lifetime (microsec): 1000 Resistivity (ohm cm) at 25°C: 2032.00 Resistivity Tolerance (ohm cm): ±700.00 RRV [%]: N.A.

【Products Offered】 * We handle various semiconductor wafers such as CZ, FZ, diffusion wafers, SiC, SOI, EPI, GaAs, SiGe, GaSb, sapphire, germanium, and more. * Prime test monitor bare wafers (high precision wafers, particle check products, COP countermeasures, etc.) * SOI wafers: High-resistance device layers, substrates can also be accommodated, and it is possible to process supplied wafers into SOI wafers. * We also handle non-particle-controlled dummy wafers (coin rolls). * Various processing services: film formation, grinding (possible below 30μm), dicing, edge chamfering, size reduction, patterning, silicon and compound semiconductor wafer reclamation, re-cleaning, measurement and analysis services, etc. We also handle various processed products of single crystal/multicrystal silicon and synthetic quartz. Please inquire about compound semiconductors and various electronic materials, wafer cases, trays, dicing tapes, and other peripheral products. We will search for products that meet specifications from both domestic and international sources. We can also process wafers purchased from other companies and deliver them.