Si・SiC・GaN・Current Status, Challenges, and Prospects of Next-Generation Power Device Technology and Application Areas [Web Seminar]
In order to achieve a decarbonized society, power semiconductor technology that enhances power conversion efficiency is gaining attention. This seminar will focus on the latest trends of GaN devices that contribute to high power density and power efficiency in AI data centers, as well as the technological innovations of SiC devices expected in the EV market. In particular, GaN excels in high-frequency and high-efficiency operation, making it an essential element for next-generation power design. On the other hand, SiC for EVs is advancing in adoption for applications such as onboard inverters due to its high voltage resistance and low loss characteristics, even as the market is at a standstill. However, silicon power devices still reign supreme at present. This is primarily because the performance, reliability, and pricing of next-generation power devices represented by SiC/GaN are not yet sufficiently meeting market demands. The current status and future trends of new material power device development technologies, including SiC/GaN, in competition with the strongest rival, silicon power devices, will be explained clearly and thoroughly, covering semiconductor elements, mounting technologies, and market forecasts.

| Date and time | Wednesday, Nov 04, 2026 10:30 AM ~ 04:30 PM |
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| Entry fee | Charge 52,800 yen |
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