Introducing the high-performance diode "Pin Diode."
Introducing the high-performance diode "Pin Diode." Massachusetts Bay Technologies in the United States designs and manufactures high-frequency discrete silicon RF semiconductors. We maintain high performance and quality as a service to end-users, supplying products to a wide range of customers, including universities, research institutes, telecommunications, as well as space communication and military applications. With 50 years of experience and achievements in the diode industry, we can also provide special diodes that cannot be manufactured elsewhere. 【Specifications】 ○Storage Temperature: -65°C to +175°C ○Operation Temperature: -65°C to +150°C ○Power Dissipation: 250 mW ○Beam Terminal Strength: Planar- 4 grams minimum / Mesa- 6 grams minimum For more details, please contact us or download the catalog. *This catalog is in English.
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basic information
【Features】 ○Breakdown voltage (VB) is measured at 10μA of reverse bias current. ○Junction capacitance is measured on a 1 MHz Boonton capacitance bridge. ○Series resistance is measured at 1 GHz using transmission loss techniques. ○Minority carrier lifetime is measured with IF = 10mA and IR = 6 mA at the 90% recovery point. ○Switching time is measured between IF = 10mA and VR = 10 volts. ○Available in various package styles. ●For more details, please contact us or download the catalog. *This catalog is in English.
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For more details, please contact us or download the catalog. *This catalog is in English.
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With the motto "Pleasant Transactions - Amicable Business -", we are actively working every day to provide high-performance overseas components at prices that our customers can appreciate. We engage in close communication with our overseas partners to not only supply products that meet your needs but also to provide comprehensive support, including technical aspects. We also offer a wide range of solutions for products from manufacturers that do not have agents in Japan and whose procurement methods may be unclear.
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