Tracking evaluation of phase transitions and crystallinity changes during the heating process.
For the sample where Pt was sputter-deposited on a Si substrate, Out-of-plane XRD and In-plane XRD measurements were conducted while increasing the temperature. In both measurements, it was observed that the peak intensity of Pt(111) increased and the full width at half maximum decreased at temperatures above 500°C, indicating that crystallization was progressing. Additionally, it was confirmed that as the temperature rose, thermal expansion caused the peaks to shift towards lower angles (the direction of increased lattice spacing).
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Analysis of solar cells, oxide semiconductors, LSI, and memory.
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