It is possible to evaluate the surface-adsorbed gas on the thin film and the desorbed gas from within the film.
The TDS analysis results regarding the SiN film on the Si substrate are presented. In the low-temperature range up to around 100°C, there is little desorption, indicating that there were few adsorbed components on the surface of the sample. On the other hand, as the temperature of the sample increases, it can be observed that m/z 2 (H2), m/z 18 (H2O), and m/z 27 (C2H3: organic fragment components) are being desorbed. TDS analysis conducted under high vacuum (1E-7 Pa) is effective for evaluating the adsorbed gas components on the film surface and trace gas components within the film.
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For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of LSI and memory.
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Download All Catalogs![[Analysis Case] Gas Analysis of SiN Film by TDS_C0403](https://image.mono.ipros.com/public/catalog/image/01/76d/335793/IPROS6398397917456495428.jpg?w=120&h=170)
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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!