The hydrogen in the outermost single atomic layer can be evaluated using TDS.
TDS is a method that heats the sample, ionizes the released gases, and performs mass analysis. It can analyze the mass-to-charge ratio (m/z) from 2 to 199 in high vacuum (1E-7 Pa). In this case, we will introduce an example of TDS analysis conducted on a Si chip treated with hydrogen termination. The TDS was able to capture the desorption of hydrogen from the hydrogen-terminated surface.
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Analysis of LSI and memory.
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