Analysis of semiconductor diffusion layers using sMIM

Detect changes in concentration as changes in C! The dC/dV signal can also be obtained, which is effective for analyzing the diffusion layer.

At Aites Co., Ltd., we conduct analysis of semiconductor diffusion layers using sMIM. The Scanning Microwave Impedance Microscopy (sMIM) features a signal that has a linear correlation with dopant concentration. sMIM scans the sample by irradiating microwaves from the tip of a metal probe attached to an SPM and measures the reflected waves to obtain sMIM-C images that have a linear correlation with the concentration of the diffusion layer. The C component of Zs obtained from reflectivity consists of oxide film capacitance and depletion layer capacitance, and by utilizing the fact that the depletion layer width changes depending on impurity concentration, we detect changes in concentration as changes in C. [Application Examples] ■ sMIM-C: Visualization of diffusion layers and semi-quantitative evaluation of dopant concentration for various semiconductor devices such as Si, SiC, GaN, InP, GaAs, etc. ■ dC/dV: Evaluation of diffusion layer shape, determination of p/n polarity, visualization of depletion layers. *For more details, please refer to the PDF materials or feel free to contact us.

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