Equipped with various film deposition, oxide layer, annealing
PBII is suitable for carbon film for pre-annealing of SiC, RTA is for annealing.
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basic information
Film formation ・ PBII (Plasma Based Ion Implantation) Carbon deposition ・ Sputter Possible to form electrode film Heat treatment ・ RTA (Rapid thermal annealing) Heat treatment up to 1800 degrees is possible by vertical high-frequency induction heating ・ Oxidation furnace Oxidation, heat treatment
Price information
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Delivery Time
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Applications/Examples of results
We support many universities, institutes and corporates.
Company information
The Ion Tech Center is a professional group that provides consulting and technical development support in "ion implantation," "physical analysis," and research and development. We aim to be a good partner for companies and university researchers as a creative laboratory equipped with cutting-edge technology and facilities that meet the demands of the times.
