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  6. Detection sensitivity due to differences in acceleration voltage during SEM-EDX analysis.

Detection sensitivity due to differences in acceleration voltage during SEM-EDX analysis.

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last updated:Jun 26, 2025

アイテス
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Appropriate acceleration conditions for accurate analysis results! The detection depth of EDX changes with differences in acceleration voltage!

This presentation introduces the detection sensitivity related to differences in acceleration voltage during SEM-EDX analysis. When analyzing the gold-plated surface of a typical printed circuit board (PCB), there are instances where the underlying nickel is detected even though it is not exposed. This is related to the scattering depth of the electron beam, and it is essential to set appropriate acceleration conditions to obtain accurate analysis results. In this study, we conducted an examination of the EDX detection depth based on differences in acceleration voltage using Monte Carlo simulations. This is just one example, but it is important to consider how electrons scatter while setting the acceleration voltage to achieve accurate analysis results. [Test Board Overview] - The sample used is a gold-plated pad from a typical printed circuit board (PCB). - The layer structure consists of nickel plating and gold plating on copper wiring. - The thickness of the gold plating, as observed in cross-section, is 212 nm. *For more details, please refer to the PDF document or feel free to contact us.*

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Detection sensitivity due to differences in acceleration voltage during SEM-EDX analysis.

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【EDX Analysis Results】 - At an acceleration voltage of 10kV, Ni in the Au plating underlayer was not detected, but at an acceleration voltage of 12kV or higher, the underlayer Ni was detected. - The reason why the underlayer information can be detected by increasing the acceleration voltage was confirmed through Monte Carlo simulation. *For more details, please refer to the PDF document or feel free to contact us.

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Detection of trace elements by EPMA

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EPMA analysis

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Cross-sectional observation of copper terminals and elemental analysis using SEM/EDX.

Cross-sectional observation of copper terminals and elemental analysis using SEM/EDX.

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Detection sensitivity due to differences in acceleration voltage during SEM-EDX analysis.

Detection sensitivity due to differences in acceleration voltage during SEM-EDX analysis.

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Differences in appearance due to SEM observation conditions.

Differences in appearance due to SEM observation conditions.

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Changes due to differences in acceleration voltage during EDX analysis.

Changes due to differences in acceleration voltage during EDX analysis.

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Basic Analysis Methods for Things that are Similar yet Different

Basic Analysis Methods for Things that are Similar yet Different

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[Data] Example of EPMA Analysis

[Data] Example of EPMA Analysis

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FE-SEM observation (Crystal grain observation of Al wire bonding section)

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Surface Analysis Guide

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[Example of TOF-SIMS] Analysis of Li

[Example of TOF-SIMS] Analysis of Li

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[Information] Differentiating Between Optical Microscopes and SEM

[Information] Differentiating Between Optical Microscopes and SEM

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Energy Dispersive X-ray Spectroscopy (EDS)

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[Analysis case by EDS] Bonding interface of Cu pad

[Analysis case by EDS] Bonding interface of Cu pad

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アイテス

アイテス

Electronic Components and Semiconductors

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Aites was established in 1993, originating from the quality assurance department of the IBM Japan Yasu office. Based on the technical expertise cultivated through cutting-edge defect analysis and reliability assurance of electronic components at the IBM Japan Yasu office, we have provided various products and services that support the development and manufacturing of semiconductors, displays, organic EL, solar cells, and electronic components to customers both domestically and internationally.

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